Semiconductor device

Abstract

A semiconductor device includes a lower pattern including a first sidewall and a second sidewall, a channel separation structure including a core separation pattern and a liner separation pattern, the liner separation pattern extending along sidewalls of the core separation pattern, a field insulating film contacting the second sidewall of the lower pattern, a channel pattern disposed on the lower pattern, and a source / drain pattern contacting the channel pattern and the channel separation structure. The core separation pattern includes a first portion, a second portion, and a connection portion, the connection portion of the core separation pattern is disposed between the first and second portions of the core separation pattern, and a slope of the sidewall of the core separation pattern at the connection portion is smaller than a slope at the first portion and a slope of the sidewall at the second portion.

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