Semiconductor device and method of manufacturing semiconductor device

Abstract

A semiconductor device is characterized by having a plurality of full-circuit gate transistors, each transistor comprising: a nanosheet stack comprising a plurality of nanosheets made of semiconductor material; source / drain electrodes disposed on both sides of the nanosheet stack and connected to the nanosheets; and a gate electrode covering the entire circumference of the nanosheets through a gate insulating film, wherein the plurality of full-circuit gate transistors includes a variety of types with different gate lengths between the source / drain electrodes, and the nanosheets of each full-circuit transistor have different film thicknesses according to the gate length.

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