Semiconductor device

Abstract

A semiconductor device includes a substrate including an active pattern, a channel pattern being on the active pattern and including a plurality of semiconductor patterns vertically spaced apart from each other, a source / drain pattern connected to the plurality of semiconductor patterns, a gate electrode on the plurality of semiconductor patterns and including an inner electrode and an outer electrode, the inner electrode interposed between a pair of semiconductor patterns that are adjacent to each other, and an outer electrode on an uppermost semiconductor pattern among the plurality of semiconductor patterns, and an inner spacer interposed between the inner electrode and the source / drain pattern, wherein the source / drain pattern includes a first semiconductor layer in contact with the plurality of semiconductor patterns, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer.

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