Semiconductor device and method for fabricating the same

Abstract

A semiconductor device including a backside power delivery network (BSPDN) and a method for fabricating the same are provided. The semiconductor device includes a semiconductor substrate including a first side and a second side that is on an opposite side of the semiconductor substrate from the first side, an active pattern on the first side, a gate structure that intersects the active pattern, a source / drain region connected to the active pattern, on a side face of the gate structure, a front wiring structure connected to at least one of the gate structure or the source / drain region, on the first side, a back wiring structure on the second side, and a contact pattern in the semiconductor substrate, wherein the contact pattern is connected to the back wiring structure, wherein a height of the contact pattern in a vertical direction intersecting the first side is smaller than a thickness of the semiconductor substrate in the vertical direction.

Images