Semiconductor devices including stressor layers and methods of forming the same

Abstract

A semiconductor device includes a substrate, a source / drain region on the substrate, a channel structure on the substrate and electrically connected to the source / drain region, a gate structure on the substrate and at least partially surrounding the channel structure, and a stressor layer in contact with an upper surface of the source / drain region and configured to apply compressive stress or tensile stress to the source / drain region.

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