Semiconductor device

Abstract

A semiconductor device includes a transistor, a first element spaced apart from the transistor in a first direction, a backside insulating structure below the transistor and the first element in a second direction that is perpendicular to the first direction, a passivation structure between the first element and the backside insulating structure, and a backside conductive pattern in the backside insulating structure and connected to the passivation structure, where the first element includes a first semiconductor region having a first conductivity type and a second semiconductor region having a second conductivity type and forming a PN junction with the first semiconductor region, the passivation structure includes a first insulating passivation layer contacting a lower surface of the first element and a conductive passivation layer below the first insulating passivation layer, and the backside conductive pattern is connected to the conductive passivation layer.

Images