Semiconductor device

Abstract

An embodiment of the present inventive concept provides a semiconductor device. The semiconductor device comprises: lower channel layers; upper channel layers; gate structures; a first source / drain pattern and a second source / drain pattern, wherein the lower channel layers are disposed between the first source / drain pattern and the second source / drain pattern; a third source / drain pattern and a fourth source / drain pattern, wherein the upper channel layers are disposed between the third source / drain pattern and the fourth source / drain pattern; an upper contact structure; a lower contact structure; and a through-contact structure electrically connecting the second source / drain pattern and the fourth source / drain pattern, wherein the gate structures comprise a first gate structure, a second gate structure and a third gate structure, and a first gap between the second gate structure and the third gate structure is greater than a second gap between the first gate structure and the second gate structure.

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