Semiconductor device including backside contact plug for side via structure

TW202633167APending Publication Date: 2026-08-01SAMSUNG ELECTRONICS CO LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-09-05
Publication Date
2026-08-01

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Abstract

Provided is a semiconductor device which includes: a 1st source / drain region; a 2nd source / drain region above the 1st source / drain region; a side via structure connected to the 2nd source / drain region; a 1st backside contact plug on the 1st source / drain region; a 2nd backside contact plug on the side via structure; a 1st backside metal line on the 1st backside contact plug; a 2nd backside metal line on the 2nd backside contact plug; and a 1st deep trench isolation structure on a side surface of the 2nd backside contact plug.
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