Semiconductor device

Abstract

A semiconductor device includes: a first transistor structure including lower channel patterns, a lower source / drain pattern, a lower gate electrode surrounding the lower channel patterns, a lower bonding insulating layer on the lower source / drain pattern and the lower gate electrode, and a lower contact structure between the lower bonding insulating layer and the lower source / drain pattern. A second transistor structure includes an upper bonding insulating layer, upper channel patterns on the upper bonding insulating layer, an upper source / drain pattern positioned on the upper bonding insulating layer and on opposite sides of the upper channel patterns, an upper gate electrode surrounding the upper channel patterns, and an upper contact structure between the upper bonding insulating layer and the upper source / drain pattern. The connection structure electrically connects the lower contact structure and the upper contact structure by penetrating the lower bonding insulating layer and the upper bonding insulating layer.

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