Semiconductor device

Abstract

A semiconductor device includes a base insulating layer comprising an upper surface and a lower surface opposing one another, a channel structure on the upper surface of the base insulating layer, a gate structure surrounding the channel structure, source / drain patterns on the upper surface of the base insulating layer and connected to the channel structure, power rails on the lower surface of the base insulating layer, and one or more lower contact electrodes connecting one or more of the power rails to one or more of the source / drain patterns, wherein a lower surface of a first lower contact electrode of the one or more lower contact electrodes is positioned at a level higher than the lower surface of the base insulating layer.

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