Semiconductor device
TW202633170APending Publication Date: 2026-08-01SAMSUNG ELECTRONICS CO LTD
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- SAMSUNG ELECTRONICS CO LTD
- Filing Date
- 2025-09-10
- Publication Date
- 2026-08-01
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Figure TWG2TA001070391_001 
Figure TWG2TA001070391_002 
Figure TWG2TA001070391_003
Abstract
A semiconductor device includes: first and second source / drain patterns on a first side of a back wiring line; a channel pattern between the first and second source / drain patterns; a back source / drain contact between the first source / drain pattern and the back wiring line; and a sacrificial semiconductor pattern between the second source / drain pattern and the back wiring line, and in contact with the second source / drain pattern. A height from the first side of the back wiring line to a lowermost portion of the first source / drain pattern is greater than a height from the first side of the back wiring line to a lowermost portion of the second source / drain pattern. The back source / drain contact includes a first side connected to the first source / drain pattern, and a second side connected to the back wiring line. The first side of the back source / drain contact has a concave shape.
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