Semiconductor device

Abstract

A semiconductor device includes a base insulating pattern, a partition wall positioned on the base insulating pattern, a first channel structure and a second channel structure positioned apart from each other with the partition wall therebetween, a gate structure surrounding the first channel structure and the second channel structure, first source / drain patterns connected to opposite sides of the first channel structure, second source / drain patterns connected to opposite sides of the second channel structure and spaced apart from the first source / drain patterns with the partition wall between the first source / drain patterns and the second source / drain patterns, and a lower contact electrode structure connected to lower portions of the first source / drain patterns and the second source / drain patterns. The partition wall extends in a direction toward a lower surface of the base insulating pattern and the partition wall extends through the lower contact electrode structure.

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