Semiconductor device

Abstract

A semiconductor device comprises a field insulating film which includes a first surface and a second surface opposite to each other in a first direction, a first protruding insulation pattern disposed on the first surface of the field insulating film, a second protruding insulation pattern disposed on the first surface of the field insulating film, and spaced apart from the first protruding insulation pattern in a second direction, a thickness of the second protruding insulation pattern in the first direction being different from a thickness of the first protruding insulation pattern in the first direction, a channel region disposed between the first protruding insulation pattern and the second protruding insulation pattern and a gate electrode disposed on the channel region, the first protruding insulation pattern, and the second protruding insulation pattern.

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