Semiconductor device and method of manufacturing semiconductor device

Abstract

This invention relates to a semiconductor device comprising a substrate and a nanosheet transistor formed on the substrate. The nanosheet transistor comprises: a semiconductor layer formed by the nanosheet that forms a channel region; a gate electrode; a source / drain region; and internal spacers. Furthermore, in a planar view along the stacking direction of the semiconductor layer and the gate electrode, the semiconductor layer has a widened portion in the region overlapping with the gate electrode, the length in the channel width direction being greater than the portion connected to the source / drain region.

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