CFET structure, semiconductor device structure, and method of forming the same

Abstract

Embodiments of the present disclosure provide CFET structures and methods of forming the same. The structure includes a first transistor including a first gate structure including a first number of dielectric layers and a first conductivity type dipole dopant, and a peak concentration of the first conductivity type dipole dopant is located at an interface between a first interfacial layer and a first gate dielectric layer of the first number of dielectric layers. The structure further includes a second transistor disposed over the first transistor, and the second transistor includes a second gate structure including a second number of dielectric layers and a second conductivity type dipole dopant opposite the first conductivity type, the second number is different from the first number, and a peak concentration of the second conductivity type dipole dopant is located in a dipole layer of the second number of dielectric layers.

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