Semiconductor device

Abstract

A semiconductor device includes: a substrate; multiple lower channel patterns positioned on the substrate; multiple upper channel patterns positioned on the plurality of lower channel patterns; a lower gate electrode surrounding the plurality of lower channel patterns; an upper gate electrode surrounding the plurality of upper channel patterns; a lower source / drain pattern positioned on opposite sides of the plurality of lower channel patterns, an upper source / drain pattern positioned on the lower source / drain pattern and on opposite sides of the plurality of upper channel patterns, and a barrier structure including a first barrier pattern positioned on the plurality of lower channel patterns and having a different conductivity type from the lower source / drain pattern, and a second barrier pattern positioned between the first barrier pattern and the plurality of upper channel patterns and having a different conductivity type from the upper source / drain pattern.

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