Semiconductor devices

Abstract

A semiconductor device may include a bit line extending in a first direction, a channel on the bit line, the channel extending in a vertical direction perpendicular to an upper surface of the bit line, and the channel including an oxide semiconductor material, a gate insulating pattern and a gate electrode sequentially stacked in the first direction from the channel, and a contact structure. The contact structure may include a first contact pattern on the channel, the first contact pattern including a reducing material, a second contact pattern on the first contact pattern, the second contact pattern including a material with a Schottky Barrier Height (SBH) with respect to the channel that is equal to or less than about 0.2eV and a third contact pattern on the second contact pattern, the third contact pattern including an electrically conductive material.

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