Integrated circuit device with varied conductor arrangement, and method of generating a layout using the same
TW202633184APending Publication Date: 2026-08-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-07-08
- Publication Date
- 2026-08-01
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Abstract
An integrated circuit device includes a first and second insulating structures spaced apart in a first direction and extending in a second direction; a first conductive segment on a first peripheral track of a first conductive layer; a second conductive segment on a second track of the first conductive layer; a first gap in the first conductive layer at an end of the first conductive segment; a second gap in the first conductive layer at an end of the second conductive segment; and a gate structure between the first insulating structure and the second insulating structure, adjacent the second gap. The second gap is between the first gap and the gate structure. The first insulating structure is between the first gap and the gate structure. The first conductive segment extends away from the gate structure to protrude beyond the second gap.
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