Electrostatic discharge (ESD) protection device

Abstract

An electrostatic discharge protection device includes a triggering bipolar junction transistor and a silicon-controlled rectifier coupled between a first conduction pad and a second conduction pad. The triggering bipolar junction transistor has a first parasitic base-emitter resistance. The silicon-controlled rectifier includes a first parasitic bipolar junction transistor and a second parasitic bipolar junction transistor. The emitter and the base of the second parasitic bipolar junction transistor are respectively coupled to the emitter and the base of the triggering bipolar junction transistor. The second parasitic bipolar junction transistor has a second parasitic base-emitter resistance less than the first parasitic base-emitter resistance. The collector of the triggering bipolar junction transistor is implemented with a first heavily doped area. The base of the first parasitic bipolar junction transistor is implemented with a first doped region that separates from the first heavily doped area.

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