Semiconductor device and method of manufacturing the same

Abstract

Various embodiments of the present disclosure are directed towards a device. The device includes a substrate comprising a first material. An absorption structure is on a surface of the substrate and comprises a second material having a smaller bandgap than the first material. The absorption structure has a first doping concentration of a first doping type. The first doping concentration of the absorption structure is greater than a doping concentration of a region of the substrate abutting the absorption structure. A first well region is in the substrate and offset from the absorption structure. The first well region has a second doping type different from the first doping type. A second well region is in the substrate and arranged between the first well region and the absorption structure. The second well region has the first doping type.

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