Nanopillar structure of image sensor device and method of forming

Abstract

Disclosed herein are approaches for forming nanopillars of an image sensor. One method of forming an image sensor may include forming a first etch stop layer over a color filter, and forming a first trench fill material within a first plurality of trenches formed in a first spacer layer, wherein the first trench fill material extends to the first etch stop layer. The method may further include forming a second etch stop layer over the first trench fill material, and forming a second trench fill material within a second plurality of trenches of a second spacer layer, wherein the second spacer layer is formed over the second etch stop layer. The method may further include forming an opening through the first and second spacer layers, the opening exposing the first etch stop layer, and performing a wet etch through the opening to remove the first and second spacer layers.

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