Camera elements, manufacturing methods, and electronic devices

Abstract

The objective of this invention is to further improve reliability. The imaging element of this invention includes: a semiconductor substrate, on which a photodiode is disposed for each pixel; a wiring layer, which is laminated onto the semiconductor substrate and has one or more metal wiring layers disposed thereon; and an absorption layer, which is disposed on the wiring layer in a manner that blocks light from the metal wiring layers, thereby absorbing laser light. The imaging element is a back-illuminated type, and the absorption layer is disposed on the semiconductor substrate side of the first metal wiring layer disposed on the wiring layer. This technology can be applied, for example, to CMOS image sensors.

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