Image sensing device manufacturing method

Abstract

The present disclosure provides an image sensing device. The image sensing device includes an image sensing structure, a die attaching material layer, a first optical multilayer structure and a covering glass. The image sensing structure includes a substrate and a pixel array. The first optical multilayer structure includes a first protecting layer and a first optical layer. The first protecting layer is disposed at one side of the die attaching material layer and covers the pixel array. The first protecting layer is suitable for resisting the chemical etching. The first optical layer is disposed at one side of the first protecting layer which is away from the die attaching material layer. The covering glass is disposed at the first optical multilayer structure. A light passes through the covering glass and the first optical multilayer structure, and the light irradiates the pixel array. The pixel array transforms the light into an electrical signal. Therefore, a problem that the chemical etching results in optical loss can be solved by disposing the first protecting layer to resist the chemical etching.

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