Spin current equation using quantum spin hall effect and quantum device using it

TW202633250APending Publication Date: 2026-08-01TINOBEL CO LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
TINOBEL CO LTD
Filing Date
2025-04-29
Publication Date
2026-08-01

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    Figure TWG2TA001070092_003
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Abstract

The present invention relates to a spin current equation utilizing the quantum spin hole effect and a quantum device utilizing the same, comprising: a substrate 100; an amorphous SiOC thin film 200 disposed on the substrate 100; a source electrode 301 disposed on the amorphous SiOC thin film 200; a drain electrode 302 disposed on the amorphous SiOC thin film 200; and a gate electrode 303 disposed on the lower part of the substrate 100. none
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