Semiconductor wafer fabrication methods

The method addresses the high cost and inefficiency of semi-insulating silicon carbide substrates by using ion implantation and laser pyrolysis to separate and reuse substrates, reducing costs and enhancing heat dissipation in semiconductor wafers.

TW202633251APending Publication Date: 2026-08-01LEAP SEMICON CORP
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Patent Information

Application Number
TW114102715
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-01-22
Publication Date
2026-08-01
Estimated Expiration
2045-01-21

AI Technical Summary

Technical Problem

The high cost and limited availability of semi-insulating silicon carbide substrates, along with the inefficiency of heat dissipation in high-power devices due to the use of multiple substrates, pose challenges in semiconductor manufacturing, particularly for high-frequency and vertical power devices.

Method used

A method involving ion implantation to create a stripping zone in a silicon carbide main substrate, followed by thermal separation and planarization, combined with a low-bandgap bonding layer and pulsed laser decomposition to separate the substrate into multiple wafers, eliminating the need for a carrier substrate and enhancing heat dissipation.

Benefits of technology

Reduces manufacturing costs by reusing the main substrate and improves heat dissipation efficiency by directly dissipating heat without a carrier substrate, while simplifying the manufacturing process and increasing yield.

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Abstract

A method for fabricating a semiconductor wafer includes the following steps: (a) preparing a main substrate and a carrier substrate; (b) depositing a bonding layer on a top surface of the carrier substrate; (c) performing ion implantation from the top surface of the main substrate downwards to form a release region; (d) thermally bonding the top surface of the main substrate to the bonding layer to form a first intermediate; (e) thermally separating the first intermediate along the release region to obtain a second intermediate comprising the carrier substrate, the bonding layer, and a thinned main substrate layer; (f) planarizing the thinned main substrate layer to obtain an epitaxial substrate; (g) performing epitaxial and semiconductor device fabrication processes on the epitaxial substrate to obtain a third intermediate; and (h) laser pyrolysis of the third intermediate to obtain a semiconductor wafer.
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