Selective deposition of silicon nitride

Abstract

Methods of forming devices by selective deposition of silicon nitride (SiN) layer on a titanium nitride (TiN) layer and not on a high‑κ dielectric layer on the same substrate. The method including a pre-treatment process before selective deposition of the silicon nitride layer. The pre-treatment process comprising, in order, a first pre-treatment process to remove native oxides from the titanium nitride and passivate dangling bonds on the high‑κ dielectric layer, and a second pre-treatment process to fluorinate the high‑κ dielectric layer. After deposition, the fluorine can be removed from the high‑κ dielectric layer. The selective deposition method occurring without formation of an inhibitor layer on the high‑κ dielectric layer.

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