Semiconductor structure and method for fabricating the same
TW202633268APending Publication Date: 2026-08-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
- Filing Date
- 2025-05-21
- Publication Date
- 2026-08-01
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Abstract
Provided are semiconductor structures and methods for fabricating such structures. A method includes forming a conductive via over a substrate; forming a dielectric layer over the conductive via and the substrate; patterning a mask over the dielectric layer; performing an etch process to etch the dielectric layer through the mask to form a trench over the conductive via, wherein the trench extends to a trench bottom formed by the dielectric layer, and wherein the trench bottom intersects the conductive via; and forming a conductive structure in the trench.
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