Method for semiconductor manufacturing
TW202633273APending Publication Date: 2026-08-01TOKYO ELECTRON LTD
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2025-10-03
- Publication Date
- 2026-08-01
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Figure TWG2TA001070689_001
Abstract
A method for semiconductor manufacturing includes providing a substrate into a plasma processing chamber, forming a ruthenium layer over the substrate with a physical vapor deposition using a sputtering gas including krypton or xenon, and forming a ruthenium feature from the ruthenium layer with a subtractive process. The physical vapor deposition is performed at a substrate temperature of less than
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