Manufacturing of semiconductor devices using an etch stop layer in fluorine-based plasma etching

TW202633275APending Publication Date: 2026-08-01PICOSUN OY
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
PICOSUN OY
Filing Date
2025-09-03
Publication Date
2026-08-01

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Abstract

The disclosure concerns a method of producing high aspect ratio (HAR) features for substrates used in semiconductor devices and related method of manufacturing a semiconductor device. In the method, an yttria etch stop layer (ESL)
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