Substrate processing apparatus, gas supply system, substrate processing method, manufacturing method and process of semiconductor device

Abstract

[Problem] To provide a technique that makes it easier to supply a large flow rate of processing gas into a processing chamber. [Solution] A technique is provided that includes: a processing chamber for processing a substrate inside; a first flow path connected at one end to a first supply source for supplying processing gas and at the other end to the processing chamber; a first opening / closing portion disposed in the first flow path; a second opening / closing portion disposed in the first flow path and between the first opening / closing portion and the processing chamber; and a second flow path connected at one end to the first flow path and between the first opening / closing portion and the second opening / closing portion, and at the other end to an exhaust device; a storage portion disposed in the second flow path; and a third opening / closing portion disposed in the second flow path and between the storage portion and the exhaust device.

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