Methods for forming coatings, coating forming systems, and intermediate substrates

Abstract

This invention provides a method for preventing damage to a thin plate caused by thermal expansion of metal disposed within a through-hole formed in an inorganic material thin plate. Specifically, it involves forming a coating film on the inner wall of a through-hole formed in an intermediate substrate of an inorganic material thin plate, wherein the intermediate substrate is a precursor of an intermediary layer that provides electrical conductivity between a semiconductor wafer and a wiring substrate, or between a semiconductor wafer and other semiconductor wafers. The method for forming the coating film includes: a coating step in which a solution containing an organic substance is applied to one side of the intermediate substrate; and a suction step in which the solution is suctioned from the other side of the intermediate substrate into the through-hole, thereby coating the inner wall of the through-hole and connecting the one side to the other side of the through-hole.

Images