Substrate processing methods, semiconductor device manufacturing methods, processes, and substrate processing apparatus

Abstract

The present invention addresses the problem of providing a technique for selectively processing desired areas on a substrate surface with recesses. The solution comprises: (a) preparing a substrate having a first region and a second region, wherein the first region is the surface forming the outer side of the recess and adjacent to the opening of the recess, and is sealed by a first end cap; and the second region is the inner surface of the recess, and is sealed by the first end cap; and (b) removing the first end cap from the first region by exposing the substrate to a first processing liquid containing a liquid that reacts with the first end cap, such that the density of the first end cap in the first region is less than the density of the first end cap in the second region.

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