Substrate processing method and substrate processing apparatus

Abstract

[Problem] A substrate processing method and a substrate processing apparatus for selectively etching a silicon compound film are provided. [Solution] The substrate processing method includes: preparing a substrate having: a base film, a first silicon compound film formed on the base film, and a photoresist film formed on the first silicon compound film and having an opening pattern; forming an alumina film covering the bottom of the opening of the photoresist film and the photoresist film; supplying a fluorine-containing gas or a fluorine-containing mixed gas to the substrate, using the alumina film formed on the bottom of the opening of the photoresist film as a catalyst for an aluminum compound, and chemically etching the pattern of the opening on the first silicon compound film; and removing the aluminum compound from the alumina film covering the photoresist film and the opening of the first silicon compound film.

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