Substrate processing methods, etching equipment, and electronic devices

Abstract

This invention provides a substrate processing method, etching apparatus, and electronic device for shaping an IGZO film. The substrate processing method comprises: a step of preparing a substrate, wherein the substrate has a substrate, a core formed on the substrate and having lines and gaps extending along a first direction, an IGZO film covering the substrate and the core, and a carbon film formed on the IGZO film and having lines and gaps extending along a second direction orthogonal to the first direction; and a step of removing the IGZO film, wherein a plasma of the etching gas is generated using a mixture of CH4 and H2 as the etching gas, and the IGZO film exposed from the openings of the carbon film is removed by reactive ion etching.

Images