Etching method and plasma treatment device

Abstract

In one exemplary embodiment, the etching method includes the following steps: (a) providing a substrate to a substrate support in a chamber, the substrate including a first region and a second region, the first region including a first material containing nitrogen and silicon, and the second region including a second material different from the first material; (b) exposing the substrate to a first processing gas including hydrogen fluoride gas; and (c) after (b), exposing the substrate to plasma generated by a second processing gas including inactive gas, the plasma including ions of inactive gas.

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