Method and system for forming a hard mask film with a tunable film stress

Abstract

This disclosure provides a method of forming a hard mask film over a semiconductor device. The method includes determining a film stress of the hard mask film based on an internal stress of the semiconductor device, performing a tungsten silicide (WSi) deposition at a cryogenic temperature over the semiconductor device to form the hard mask film, determining a time period of an annealing process to be performed based on the determined film stress of the WSi hard mask film, and performing the annealing process to the WSi hard mask film based on the determined time period.

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