Selective etching between silicon-containing materials and silicon-and-germanium-containing materials with varying germanium concentration

Abstract

Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A silicon-containing material and a silicon-and-germanium-containing material may be disposed on the substrate. The methods may include contacting the substrate with the fluorine-containing precursor and the nitrogen-containing precursor. The contacting may etch the silicon-containing material relative to the silicon-and-germanium-containing material at a selectivity of greater than or about

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