Etching method and plasma processing apparatus

TW202633295APending Publication Date: 2026-08-01TOKYO ELECTRON LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
TOKYO ELECTRON LTD
Filing Date
2022-06-10
Publication Date
2026-08-01

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Abstract

An etching method includes: preparing a substrate including a first region containing silicon and nitrogen, and a second region containing silicon and oxygen; and etching the second region while forming a tungsten-containing protective layer on the first region, by exposing the first and second regions to plasma generated from a processing gas containing carbon, fluorine, and tungsten.
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