Method of treating thin films and method of manufacturing memory device

Abstract

Disclosed is a method of treating thin films, comprising: supplying a capping precursor into a chamber in which a substrate is placed to adsorb the capping precursor onto a thin film formed on the substrate; purging the inside of the chamber; supplying a reaction material into the chamber to form a capping layer; purging the inside of the chamber; annealing the substrate; supplying an etch initiator into the chamber; purging the inside of the chamber; supplying a reaction material into the chamber to activate the etch initiator; and purging the inside of the chamber, wherein the capping precursor has, as a central element, a metal that can grow in the same crystal as the thin film.

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