Crystal rod processing equipment and processing methods

Abstract

A crystal ingot processing apparatus includes a clamping unit, one or more first processing devices, a second processing device, and a moving mechanism. The clamping unit clamps a crystal ingot and positions it laterally. The first processing devices perform a first processing and a second processing on the crystal ingot. The first processing involves removing a circumferential portion of the crystal ingot, and the second processing involves removing a first portion of an outer circumferential surface of the crystal ingot in an upward circumferential direction. The second processing device removes a second portion of the outer circumferential surface of the crystal ingot in a radial direction, serving as a marking area. During the first processing, an axial direction of the crystal ingot is tilted at an angle relative to a processing direction of the crystal ingot.

Description

[Technical Field]

[0001] This invention relates to a processing equipment and a processing method, and particularly to a crystal rod processing equipment and a processing method thereof. [Previous Technology]

[0002] Wafer is the basic material for semiconductor devices. In a standard wafer manufacturing process, silicon ingots are first grown, and then, after processes such as rounding, grinding, polishing, marking, and trenching, the silicon ingots are wire-cut to obtain multiple wafers. Subsequent processes include deposition, etching, and planarization on the wafers.

[0003] Related technology, such as Taiwan Patent Application No. TW 113130566 filed by the applicant in this case, discloses a crystal ingot processing apparatus for continuous processing of small-sized wafers through multiple processes. The crystal ingot processing apparatus includes a clamping unit, one or more first processing devices, a second processing device, and a moving mechanism. The clamping unit is used to clamp a crystal ingot and position it laterally. A marking processing component of the first processing device is used to remove a first portion of an outer circumferential surface of the crystal ingot to form a marking area. A main processing component of the second processing device is used to process the crystal ingot from the marking area, thereby removing a second portion connected to the marking area.

[0004] The applicant's Taiwan Patent Application No. TW 113130567 discloses a crystal ingot processing apparatus for continuous processing of large-sized wafers through multiple processes. The crystal ingot processing apparatus includes a clamping unit, a first processing device, a second processing device, and a moving mechanism. The clamping unit clamps a crystal ingot and positions it longitudinally. A marking processing component of the first processing device removes a first portion from an outer circumferential surface of the crystal ingot to form a marking area. A main processing component of the second processing device processes the crystal ingot from the marking area, removing a second portion connected to the marking area.

[0005] In other existing technologies for crystal rod processing, such as Taiwan Invention Patent Publication No. TW 1524966B, a composite chamfering processing device and a composite chamfering processing method for cylindrical workpieces are disclosed. The method involves grinding the cylindrical workpiece with a pair of grinding wheel-type coarse grinding stones, followed by grinding the workpiece with a grinding wheel-type fine grinding stone, measuring the crystal orientation of the workpiece with an XRD machine, and then grooving the workpiece with an inverted V-shaped grinding wheel, or performing directional planar grinding processing with the aforementioned grinding wheel-type coarse grinding stones.

[0006] For example, Taiwan Invention Patent Publication No. TW 1843233B discloses a multi-wire cutting device, including an impact table, a crystal rod fixing structure, a cutting structure, a linear guide mechanism, and a movement control structure. The crystal rod fixing structure is disposed on the impact table. A crystal rod to be cut is fixed on the crystal rod fixing structure. The cutting structure is disposed above the impact table and includes at least two wire rollers and multiple cutting wires wound on the at least two wire rollers. The linear guide mechanism is located between the impact table and the crystal rod fixing structure and is capable of horizontal displacement along the axial direction of the crystal rod. After the linear guide mechanism moves, it can change the horizontal position of the feed axis of the impact table. The movement control structure is used to control the horizontal displacement of the linear guide mechanism according to the cutting compensation amount.

[0007] Furthermore, Taiwan Invention Patent Publication No. TW 202306733A provides a method for cutting a crystal rod, comprising: adjusting the crystal orientation of the crystal rod; bonding the adjusted crystal rod to a workpiece plate using a resin strip, wherein the extension direction of the crystal rod is parallel to the workpiece plate; covering the crystal rod with a container, forming a receiving space between the container and the workpiece plate, wherein the crystal rod is located within the receiving space; the container having an opening away from the workpiece plate; adding liquid resin into the receiving space through the opening, wherein the liquid resin coats at least a portion of the crystal rod; curing the liquid resin to form a resin block coating the crystal rod; removing the container; feeding the resin block coating the crystal rod into a wire cutting device for wire cutting to obtain multiple resin-coated silicon wafers; and removing the resin coating from the silicon wafers.

[0008] The prior art can also be found in Japanese Patent Publication No. JPH08-155948A, in which a guide groove is formed by cutting along the circumferential direction on a silicon crystal rod. The guide groove is provided along the outer circumference of the silicon crystal rod by a rotating blade. The guide groove is formed on the outer circumference of the silicon crystal rod before the wire saw is cut. The wire saw will be guided by the guide groove, which can prevent the wire saw from moving and causing cutting bending. In addition, there will be no crystallization direction deviation caused by the tilt of the axis of the silicon crystal rod.

[0009] Nevertheless, there are still many problems with the existing equipment that need to be improved in order to optimize the processing of crystal rods, improve processing efficiency and accuracy and reduce the generation of defects. [Summary of the Invention]

[0010] This invention discloses a crystal ingot processing apparatus, comprising a clamping unit, one or more first processing devices, a second processing device, and a moving mechanism. The clamping unit is used to clamp a crystal ingot and position the crystal ingot laterally. The first processing device includes at least one processing element, which performs a first processing and a second processing on the crystal ingot. The first processing involves removing a circumferential portion of the crystal ingot, and the second processing involves removing a first portion of an outer circumferential surface of the crystal ingot in an upward circumferential direction. During the first processing, an axial direction of the crystal ingot is tilted at an angle relative to a processing direction of the crystal ingot by the processing element. The second processing device is disposed after the first processing device and includes a marking processing element, which is used to remove a second portion of the outer circumferential surface of the crystal ingot in a radial direction as a marking area. The moving mechanism allows the crystal ingot on the clamping unit to undergo a first displacement relative to the processing element and a second displacement relative to the marking processing element.

[0011] The present invention also discloses a crystal rod processing method, comprising the following steps: clamping a crystal rod so that the crystal rod is arranged laterally; performing a first processing on the crystal rod, wherein a circumferential portion of the crystal rod is removed to expose an outer ring surface, wherein, during the first processing, an axial direction of the crystal rod is tilted at an angle relative to a processing direction of a processing workpiece; performing a second processing on the crystal rod, wherein a first portion of the outer ring surface of the crystal rod is removed in an upward circumferential direction; and performing a third processing on the crystal rod, wherein a second portion of the outer ring surface of the crystal rod is removed along the axial direction to serve as a marking area. [Simplified Explanation of the Diagram]

[0042] Figure 1 is a schematic diagram of the first embodiment of the present invention.

[0043] Figure 2 is a schematic diagram of a tilted crystal rod in one embodiment.

[0044] Figure 3 is a schematic diagram of the crystal rod being processed by the first processing component in one embodiment.

[0045] Figure 4 is a schematic diagram of the crystal rod being processed by the second processing component in one embodiment of the present invention.

[0046] Figures 5A and 5B are schematic diagrams of crystal rods being processed by marking components in different embodiments of the present invention.

[0047] 『Figure 6』 is a flowchart of the crystal rod processing steps of the present invention.

[0048] Figure 7 is a schematic diagram of the second embodiment of the present invention.

[0049] Figure 8 is a schematic diagram of the third embodiment of the present invention.

Implementation Method

[0012] The terminology used herein is for the purpose of illustrating particular embodiments only and is not intended to limit the invention. Unless the context otherwise indicates, the singular forms "a" and "the" used herein may also include the plural forms.

[0013] The directional terms used herein, such as up, down, left, right, front, back and their derivatives or synonyms, refer to the orientation of elements in the accompanying drawings and are not intended to limit the invention, unless the context clearly states otherwise.

[0014] This document uses flowcharts to illustrate the steps performed according to the embodiments. It should be understood that the steps do not necessarily have to be performed in the exact order described herein. Instead, these steps can be performed in reverse order or simultaneously. Additionally, other steps can be added to the process, or one or more steps can be removed from these processes.

[0015] This invention discloses a crystal rod processing equipment for optimizing the crystal rod processing flow. Different processing procedures, such as rounding, marking, and grooving, can be performed on crystal rods simultaneously or continuously in a single device.

[0016] A first embodiment of the present invention, as shown in FIG1, discloses a crystal ingot processing apparatus 1, including a frame 10, a clamping unit 20, a positioning device 30, a first processing device 40, a second processing device 50, a moving mechanism 60, and a non-contact detection unit 70. The clamping unit 20, the positioning device 30, the first processing device 40, the second processing device 50, the moving mechanism 60, and the non-contact detection unit 70 are disposed on the frame 10.

[0017] The clamping unit 20 moves relative to the first processing device 40 and the second processing device 50 under the drive of the moving mechanism 60. In this example, the second processing device 50 is located after the first processing device 40. That is, in terms of the manufacturing process, the crystal ingot is first processed by the first processing device 40 and then processed by the second processing device 50. In the first embodiment, the processing of the first processing device 40 includes rounding and grooving, and the processing of the second processing device 50 is marking.

[0018] The frame 10 includes a work platform 11 and a side wall 12. The work platform 11 is arranged along a horizontal plane, and the side wall 12 is perpendicular to the work platform 11, defining a workspace 13. In this disclosure, the clamping unit 20, the positioning device 30, and the non-contact detection unit 70 are disposed on the work platform 11 and face the workspace 13. The first processing device 40 and the second processing device 50 are disposed on the side wall 12 and face the workspace 13. The clamping unit 20, the first processing device 40, and the second processing device 50 are driven by the moving mechanism 60 and can move relative to the work platform 11 or the side wall 12. The frame 10 is configured to define the workspace 13 to house these mechanisms, devices, or equipment, and can be other structures or mechanical components besides those shown in the drawings, not limited to the disclosed work platform 11 and side wall 12. The workspace 13 can accommodate the clamping unit 20, the positioning device 30, the first processing device 40, the second processing device 50, the moving mechanism 60, and the non-contact detection unit 70.

[0019] The clamping unit 20 is used to clamp a crystal rod C to be processed, and the clamping unit 20 is configured to make the crystal rod C horizontally arranged. The clamping unit 20 includes a first clamping head 21 and a second clamping head 22. The first clamping head 21 and the second clamping head 22 are horizontally spaced apart. The first clamping head 21 abuts against a first end C1 of the crystal rod C and the second clamping head 22 abuts against a second end C2 of the crystal rod C. An outer annular surface C0 of the crystal rod C between the first end C1 and the second end C2 is exposed and can be processed by the first processing device 40 and / or the second processing device 50.

[0020] The positioning device 30 includes one or more moving members 31, which are adjacent to the outer annular surface C0 of the crystal rod C. In this example, the moving member 31 may have a first crossbar and a second crossbar, which are respectively disposed on both sides of the crystal rod C. The first crossbar and the second crossbar extend along the long axis of the crystal rod C and move closer to or further away from the outer annular surface C0 of the crystal rod C to abut or disengage from the outer annular surface C0, thereby moving the crystal rod C along a direction orthogonal to the long axis of the crystal rod C (such as the Y direction in 'Figure 1'), thereby adjusting the position or angle of the crystal rod C on the clamping unit 20.

[0021] The first processing device 40 includes a first processing component 41 and a second processing component 42. In this example, the first processing component 41 is a grinding wheel or a grinding disc, and the second processing component 42 is a grinding wheel. The first processing component 41 is processed first, and the second processing component 42 is processed later.

[0022] The first processing component 41 is configured to perform a first processing on the crystal rod C to remove a circumferential surface portion C4 of the crystal rod C. During the first processing, the first processing component 41 and the crystal rod C can be tilted relative to each other at an angle θ to facilitate the removal of the circumferential surface portion C4. The circumferential surface portion C4 is defined as a part of the crystal rod C adjacent to the outer annular surface C0, as shown in Figure 3. The first processing performs a rounding grinding process (or outer cylindrical grinding process, peeling process) on the crystal rod C, so that after the circumferential surface portion C4 is removed, a rounded outer annular surface C3 is exposed. It can be understood that the rounding grinding process of the first processing is to grind the outer annular surface C0 of the crystal rod C. By removing the circumferential surface portion C4, uneven surfaces can be removed and flatness can be improved. The second processing component 42 is configured to perform a second processing on the outer annular surface C3 of the crystal rod C. The second processing is to form a groove on the crystal rod C.

[0023] In this example, the clamping unit 20 is adjusted to be offset in the XY plane. In other examples, the clamping unit 20 may be offset in other directions. As shown in Figure 2, the movement direction of the crystal rod C relative to the first processing member 41 is a horizontal direction X. Therefore, the horizontal direction X can be defined as a processing direction. By offsetting the clamping unit 20, an axial direction A1 of the crystal rod C is tilted at an angle θ in a clockwise or counterclockwise direction relative to the processing direction. The axial direction A1 can be defined as the major axis direction of the crystal rod C after crystal growth. When the first processing member 41 is a grinding wheel, it can be regarded that an axial direction A2 of the grinding wheel is tilted at an angle θ relative to the axial direction A1 of the crystal rod. The angle θ may be, but is not limited to, less than 10°, preferably between 0.1° and 1°, and most preferably between 0.1° and 0.5°. The tilt of the clamping unit 20 can be used for rounding in the first workpiece 41. In one example, the processing direction can be the same as the axial direction A2 of the first workpiece 41, or it can be the direction in which the first processing device 40 moves relative to the outer ring surface C0 of the crystal rod C. The first clamping head 21 and the second clamping head 22 can rotate relative to the axial direction A1 of the clamped crystal rod C to assist the first processing device 40 in performing processing.

[0024] By adjusting the first clamping head 21 and the second clamping head 22 of the clamping unit 20, the axial direction A1 of the crystal rod C is tilted at an angle θ relative to the processing direction to achieve rounding. The crystal orientation of the crystal rod C after processing can be adjusted according to requirements, which helps to improve the quality of the epitaxial layer and reduce crystal orientation-related defects. For example, a small tilt angle helps to uniformly remove material and increase the removal rate, making it easier to remove debris generated during the peeling process of the crystal rod C, thereby obtaining a smoother surface and improving the speed and quality of the peeling process, reducing defects during epitaxial layer growth. Furthermore, by precisely controlling the angle, it can be ensured that the crystal orientation of the final wafer after slicing meets the design requirements. During processing, the tilt angle setting can avoid friction and stress concentration problems, which helps to increase processing efficiency, prevent cracks and defects from forming on the crystal rod surface, and ensure surface quality.

[0025] Returning to 'Figure 1', the second processing element 42 is configured to perform the second processing on the crystal rod C, the second processing being to remove a portion of the crystal rod C to form an annular groove.

[0026] The second processing device 50 is disposed after the first processing device 40 and includes a marking processing member 51, which is used to remove a portion of the crystal rod C to form one or more marks. It should be understood that the operation of the first processing member 41 and the second processing member 42 is for the removal processing of the crystal rod C, while the removal of the portion by the marking processing member 51 is not for the removal processing of the crystal rod C, but rather as a marking.

[0027] The moving mechanism 60 includes one or more first moving modules 61, a second moving module 62, and a third moving module 63. The first moving module 61 corresponds to the number of the first processing devices 40 and is connected to the first processing device 40 to drive the first processing device 40 to move along a vertical direction (Z direction) and a first horizontal direction (Y direction), the first horizontal direction being orthogonal to the major axis direction. In this example, multiple first moving modules 61a and 61b are respectively connected to and control the first processed part 41 and the second processed part 42 of the first processing device 40.

[0028] The second moving module 62 is connected to the second processing device 50 and drives the second processing device 50 to move along the vertical direction and a second horizontal direction. In this example, the second horizontal direction is orthogonal to the major axis direction and is in the same direction as the first horizontal direction, i.e., both are the Y direction. In different examples, the first horizontal direction and the second horizontal direction may be in the same direction, or they may be facing the same direction but in different directions in space.

[0029] The third moving module 63 is connected to the clamping unit 20 and drives the clamping unit 20 to move along the long axis direction. The third moving module 63 allows the crystal rod C on the clamping unit 20 to perform a first displacement relative to the first processed part 41 and a second displacement relative to the second processed part 42, and allows the crystal rod C on the clamping unit 20 to perform a third displacement relative to the marking processed part 51. In detail, the first processed part 41 and the second processed part 42 of the first processing device 40 and the marking processed part 51 of the second processing device 50 are sequentially positioned along a row of travel direction of the clamping unit 20 (dynamically moving in the direction of the long axis direction). The third moving module 63 includes a driving unit 631 and a slide rail 632. The slide rail 632 extends along the long axis. The first displacement, the second displacement and the third displacement are driven by the driving unit 631 to move the clamping unit 20 along the slide rail 632 in the traveling direction, so that the crystal rod C is located near the first processing part 41, the second processing part 42 or the marking processing part 51 for different processing processes.

[0030] The non-contact detection unit 70 is used to detect the position of the crystal rod C relative to the first processing device 40 or the second processing device 50. In one example, the non-contact detection unit 70 may be an optical, capacitive, ultrasonic, photoelectric or magnetic induction type position detection device.

[0031] Next, the processing of the crystal rod C in this example will be described. Before the grooving process, the crystal rod C is first rounded using the first processing part 41, and the circumferential portion C4 of the crystal rod C is removed, as shown in Figure 3. Then, the crystal rod C is fed into the second processing part 42 to perform the grooving. The second processing part 42 can be a grinding wheel or other grinding tool.

[0032] As shown in 'Figure 4', the second processing part 42 processes the outer ring surface C3 of the crystal rod C, and removes a first part C31 along a circumferential direction to form a groove G. The groove G is formed along a complete circumference of the outer ring surface C3. The groove G can be used to assist the wire cutting process of the crystal rod C.

[0033] Next, the crystal rod C is fed into the marking processing part of the second processing device 50 for marking processing. Figures 5A and 5B show schematic diagrams of the crystal rod C after marking in different examples of Figure 4. After the marking processing part 51 is adjusted relative to the frame 10 and the crystal rod C by the second moving module 62, the marking processing part 51 is driven to perform the marking processing from the outer annular surface C3 of the crystal rod C, removing a second portion C32 to form a notch N (Figure 5A) or a polished surface P (Figure 5B). In this example, the marking processing part 51 is a grinding head, a grinding disc, or other grinding tool (the grinding disc is used as a non-limiting example in Figure 1), depending on the desired marking structure. For example, if the notch N is to be used as the marking structure, the grinding head can be selected; if the polished surface P is to be used as the marking structure, the grinding disc can be selected. The grinding head is used to form the notch N from the outer annular surface C3 of the crystal rod C along the axial direction A1, and the grinding disc is used to form the grinding surface P from the outer annular surface C3 of the crystal rod C along the axial direction A1.

[0034] The notch N and the ground surface P can serve as a marking area M, which can serve as a mark of a specific crystallization direction or plane of the crystal rod C. The notch N and the ground surface P can extend completely along a length of the crystal rod C (from the first end C1 to the second end C2), or they can be other structures or morphologies, such as only along a portion of the length.

[0035] The first processing involves removing a portion (or a layer) of the outer annular surface C0 of the crystal rod C. The removed portion can be understood as being entirely along the axial direction A1 and a radial direction of the crystal rod C. The second processing can be performed simultaneously with or sequentially with the first processing. The second processing involves removing a portion of the outer annular surface C3 of the crystal rod C along a circumferential direction. The removed portion will be a segment along the axial direction A1 and along the complete circumference. If the first processing is performed first and then the second processing, a portion of the outer annular surface C3 will be removed. If the first processing and the second processing are performed simultaneously, a portion of the outer annular surface C0 will be removed. The third processing involves removing a portion of the outer annular surface C3 of the crystal rod C along the axial direction A1. The removed portion will be entirely along the axial direction A1 of the crystal rod C, but not along the complete circumference.

[0036] In this example, the radial depth of the marked region M is not greater than the radial recess of the trench G. It can also be understood that the trench G is the radial recess along the outer annular surface C3 of the crystal rod C and is not less than the radial depth of the marked region M. The radial depth and the radial recess can be understood as a dimension of the removed portion, that is, the difference in size after removal compared to before removal.

[0037] The present invention further provides a method for processing crystal rods, which can be based on the crystal rod processing equipment 1 disclosed above, or may employ other equipment. Referring together to Figures 3 to 6, firstly, the crystal rod C is clamped by the clamping unit 20 to set the crystal rod C laterally (step S1); then, the crystal rod C is moved along the long axis direction to a first processing station to remove the peripheral surface portion C4 of the crystal rod C and expose the outer ring surface C3 (step S2), the first processing station is configured to set the first processing piece 41; the crystal rod C is moved along the long axis direction to a second processing station to remove the first portion C31 on the outer ring surface C3 of the crystal rod C (step S3). The second processing station is configured to install the second processing element 42. The first portion C31 of the crystal rod C is removed at the second processing station to form the groove G. The crystal rod C is then moved along the long axis to a third processing station to remove the second portion C32 connected to the outer annular surface C3 of the crystal rod C (step S4). The third processing station is configured to install the marking processing element 51. The second portion C32 of the crystal rod C is removed at the third processing station to form either the notch N or the grinding surface P of the marking area M. In this example, the crystal rod C can be simultaneously processed by the first processing element 41 and the second processing element 42; or the first processing can be performed by the first processing element 41 first, and then the second processing can be performed by the second processing element 42.

[0038] The first processing station, the second processing station, and the third processing station are located on the frame 10. When the crystal ingot C is processed, the first processing station, the second processing station, and the third processing station remain in a planar position on the frame 10. That is, after the crystal ingot C is fixed to the clamping unit 20, it is moved to the first processing station, the second processing station, or the third processing station at the same position relative to the clamping unit 20 via the third moving module 63 for processing. In this example, the planar position can be the position of the XY plane.

[0039] As shown in Figure 7, a second embodiment of the present invention discloses a crystal ingot processing apparatus 2, which has similar devices or elements to the crystal ingot processing apparatus 1 described in the first embodiment. The difference is that in the second embodiment, the first processing component 41 and the second processing component 42 are both disposed at the first processing station, and the first processing component 41 and the marking processing component 51 face each other. That is, when the crystal ingot C is moved to a processing position of the first processing component 41, the crystal ingot C is located between the first processing component 41 and the second processing component 42. In this way, the crystal ingot C is directly processed sequentially by the first processing component 41 and the second processing component 42 at the processing position.

[0040] A third embodiment of the present invention, as shown in FIG8, discloses a crystal rod processing apparatus 3, which has similar devices or elements to the crystal rod processing apparatus 1 described in the first embodiment. The difference is that in the third embodiment, the first processing element 41 and the second processing element 42 are integrated into a single processing element 43 (grinding wheel) and disposed at the first processing station. That is, when the crystal rod C is moved to a processing position of the first processing device 40, the crystal rod C is subjected to the first processing and the second processing by the processing element 43. In one example, the crystal rod C can be subjected to the first processing and the second processing simultaneously by the processing element 43 (for example, the second processing is performed simultaneously while the first processing is in progress but not yet completed); or, the crystal rod C can be subjected to the first processing by the processing element 43 first, and then the second processing is performed by the processing element 43 (that is, the second processing is performed after the first processing is completed).

[0041] In summary, the present invention integrates the first processing part for rounding, the second processing part for trenching, and the marking processing part for marking into a single device, all performed on the same working platform. This eliminates the need to remove the crystal ingot; marking can be performed directly after rounding and trenching, improving process efficiency. More importantly, by reducing the unloading and clamping of the crystal ingot, processing accuracy can be better ensured. With the addition of a non-contact detection unit and positioning device, the position of the crystal ingot can be quickly detected at each processing station and adjusted and positioned, further improving process efficiency. Furthermore, tilting the crystal ingot's axis relative to the processing direction during the first processing helps improve the quality of the epitaxial layer and reduces defects related to crystal orientation.

Claims

1. A crystal rod processing apparatus, comprising: A clamping unit for clamping a crystal ingot and positioning the crystal ingot laterally; one or more first processing devices, each first processing device including at least one processing element, the processing element performing a first processing and a second processing on the crystal ingot, the first processing being removing a circumferential portion of the crystal ingot, the second processing being removing a first portion of an outer circumferential surface of the crystal ingot in an upward circumferential direction, wherein, during the first processing, an axial direction of the crystal ingot is tilted at an angle relative to a processing direction of the crystal ingot by the processing element; a second processing device disposed after the first processing device and including a marking processing element, the marking processing element being used to remove a second portion of the outer circumferential surface of the crystal ingot along the axial direction as a marking area; and a moving mechanism for the crystal ingot on the clamping unit to perform a first displacement relative to the processing element, and for the crystal ingot on the clamping unit to perform a second displacement relative to the marking processing element.

2. The crystal rod processing apparatus as claimed in claim 1, wherein the angle is less than 10 degrees.

3. The crystal rod processing apparatus as claimed in claim 1, wherein the processing component is a grinding wheel or a grinding disc.

4. The crystal rod processing apparatus as claimed in claim 1, wherein the second processing is used to remove the first portion on the outer annular surface of the crystal rod to form a groove.

5. The crystal rod processing apparatus as claimed in claim 4, wherein the marking component is a grinding disc or a grinding head.

6. The crystal rod processing apparatus of claim 5, wherein the grinding head is used to form a notch from the outer annular surface of the crystal rod, the radial depth of the notch being no greater than a radial recess of the groove.

7. The crystal rod processing apparatus of claim 5, wherein the grinding disc is used to form a grinding surface from the outer annular surface of the crystal rod, the radial depth of the grinding surface being no greater than a radial recess of the groove.

8. The crystal rod processing apparatus of claim 1, wherein the clamping unit includes a first clamping head and a second clamping head horizontally spaced apart from the first clamping head, the first clamping head abutting a first end of the crystal rod and the second clamping head abutting a second end of the crystal rod to expose the outer annular surface of the crystal rod.

9. The crystal rod processing apparatus of claim 1, further comprising a positioning device including one or more movable members adjacent to the outer annular surface of the crystal rod, the movable members extending along the long axis of the crystal rod and moving relative to the outer annular surface of the crystal rod to abut or disengage from the outer annular surface, thereby moving the crystal rod in a direction orthogonal to a long axis.

10. The crystal rod processing equipment as claimed in claim 9, further comprising a working platform on which the clamping unit, the first processing device, the second processing device and the positioning device are disposed.

11. The crystal rod processing apparatus of claim 1, further comprising a non-contact detection unit for detecting a position of the crystal rod relative to the first processing device or the second processing device.

12. The crystal rod processing apparatus as claimed in claim 1, wherein the first processing device and the second processing device are arranged sequentially along a direction of travel parallel to the clamping unit.

13. The ingot processing apparatus as claimed in claim 1, wherein the moving mechanism comprises: One or more first moving modules are connected to the first processing device and drive the first processing device to move along a vertical direction and a first horizontal direction, the first horizontal direction being orthogonal to a major axis direction; a second moving module is connected to the second processing device and drives the second processing device to move along the vertical direction and a second horizontal direction, the second horizontal direction being orthogonal to the major axis direction; and a third moving module is connected to the clamping unit and drives the clamping unit to move along the major axis direction.

14. The crystal rod processing apparatus as claimed in claim 1, wherein the processing component is a single processing component, and both the first processing and the second processing are performed by the single processing component.

15. The crystal rod processing apparatus as claimed in claim 1, wherein the processing component includes a first processing component and a second processing component, respectively used for performing the first processing and the second processing.

16. A method for processing a crystal ingot, comprising the following steps: clamping a crystal ingot so that the crystal ingot is positioned laterally; performing a first processing on the crystal ingot, wherein a circumferential portion of the crystal ingot is removed to expose an outer annular surface, wherein, During the first processing, the crystal rod is tilted at an angle relative to the processing direction of a workpiece; during the second processing, the outer annular surface of the crystal rod is removed in a first portion that is circumferentially upward; and during the third processing, the outer annular surface of the crystal rod is removed along a second portion that is axially upward as a marking area.

17. The method for processing a crystal rod as described in claim 16, wherein the angle is less than 10 degrees.

18. The method for processing a crystal rod as claimed in claim 16, wherein the processing element is a single processing element, and both the first processing and the second processing are performed by the single processing element.

19. The crystal rod processing method as claimed in claim 16, wherein the processed part includes a first processed part and a second processed part, respectively used for performing the first processing and the second processing.

20. The method for processing a crystal rod as described in claim 19, wherein the first processing is performed first, and then the second processing is performed.

21. The ingot processing method as described in claim 19, wherein the first processing and the second processing are performed simultaneously.

22. The crystal rod processing method as claimed in claim 16, wherein the first portion of the crystal rod is removed in the second processing to form a trench.

23. The crystal rod processing method as claimed in claim 16, wherein the second portion of the crystal rod is removed in the third processing to form a notch or a ground surface.

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