Manufacturing method of semiconductor device

Abstract

A manufacturing method of a semiconductor device includes forming a dissociation material layer on a first release layer; performing a first heating process to convert the dissociation material layer from a liquid state to a solid state to form a first film-like structure; forming an adhesive layer on the second release layer to form a second film-like structure; assemble the first film-like structure and the second film-like structure into a film-like component; attach the film-like component to the process component; performing a second heating process on the film-like component; and performing a laser process to remove the dissociation material layer.

Description

Technical Field

[0001] This invention relates to a method for manufacturing a semiconductor device. Prior Technology

[0002] In the manufacturing of semiconductor devices, during the stages of wafer thinning, back support, and circuit fabrication (such as sputtering, electroplating, exposure, development, etching, and passivation), a coating process is often used to directly form dissociated materials onto the process components to serve as temporary functional components. However, this coating process has problems such as low product yield, long manufacturing time, and high manufacturing cost. Summary of the Invention

[0003] This invention provides a method for manufacturing a semiconductor device, which can effectively improve product yield, shorten manufacturing time and reduce manufacturing costs.

[0004] A method for manufacturing a semiconductor device according to the present invention includes forming a dissociative material layer on a first release layer; performing a first heating process to change the dissociative material layer from a liquid state to a solid state to form a first film structure; forming an adhesive layer on a second release layer to form a second film structure; assembling the first film structure and the second film structure into a film assembly; attaching the film assembly to a process element; performing a second heating process on the film assembly; and performing a laser process to remove the dissociative material layer.

[0005] In one embodiment of the present invention, the temperature of the first heating process is lower than the temperature of the second heating process.

[0006] In one embodiment of the present invention, the heating temperature range of the first heating process is between 60°C and 200°C, and the heating time range of the first heating process is between 10 seconds (sec) and 120 seconds (sec).

[0007] In one embodiment of the present invention, the heating temperature range of the second heating process is between 200°C and 300°C, and the heating time range of the second heating process is between 10 minutes (min) and 60 minutes (min).

[0008] In one embodiment of the present invention, the energy density of the laser process described above is between 1 watt (W) and 6 watts (W).

[0009] In one embodiment of the present invention, the wavelength of the laser process described above is 355 nanometers or 532 nanometers.

[0010] In one embodiment of the present invention, the above-mentioned dissociative material layer is formed by a microgravure process.

[0011] In one embodiment of the present invention, the above-described step of attaching the film-like component to the process element further includes: after removing the second release layer, attaching the release material layer and the first release layer to the process element through the adhesive layer; performing a trimming process on the adhesive layer, the release material layer and the first release layer; and removing the first release layer.

[0012] In one embodiment of the present invention, after performing the above-described trimming process, the edges of the adhesive layer, the edges of the dissociative material layer, and the edges of the process elements are aligned.

[0013] In one embodiment of the present invention, the above-mentioned process element is a square glass wafer.

[0014] Based on the above, the temporary functional element (film assembly) manufactured through step design in the semiconductor device manufacturing method of the present invention has advantages such as higher ease of use, better film uniformity and lower manufacturing cost. Therefore, when it is attached to the process element, it can effectively improve product yield, shorten manufacturing time and reduce manufacturing cost.

[0015] To make the above features and advantages of the present invention more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings for detailed explanation. Simple Explanation of the Diagram

[0016] Figures 1, 2, 3, 4 and 5 are partial cross-sectional schematic diagrams of a method for manufacturing a semiconductor device according to an embodiment of the present invention. Figure 6 is a partial side view of the method for forming the dissociative material layer in Figure 1. Implementation

[0017] The invention is described more fully with reference to the drawings of this embodiment. However, the invention may be embodied in various different forms and should not be limited to the embodiments described herein. The thickness, dimensions, or size of layers or regions in the drawings are enlarged for clarity. The same or similar reference numerals denote the same or similar elements, which will not be described again in the following paragraphs.

[0018] Unless otherwise stated, the term "between" used in this specification to define numerical ranges is intended to cover the range equal to and between the endpoint values. For example, a size range between a first value and a second value means that the size range can cover the first value, the second value, and any value between the first value and the second value.

[0019] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains.

[0020] Figures 1, 2, 3, 4, and 5 are partial cross-sectional schematic diagrams of a method for manufacturing a semiconductor device according to an embodiment of the present invention. Figure 6 is a partial side view of the method for forming a dissociable material layer of Figure 1.

[0021] Referring to Figure 1, a first release layer 11 is provided to facilitate the subsequent transfer of the release material layer 12. The thickness 11T of the first release layer 11 can range from 75 micrometers (µm) to 100 micrometers. The material of the first release layer 11 can be PET (polyethylene terephthalate), polyolefins (PO), release paper, or the like. The release force of the first release layer 11 can be determined depending on the material actually selected, and this invention is not limited thereto.

[0022] Next, a dissociative material layer 12 can be formed on the first release layer 11, wherein the dissociative material layer 12 is suitable for laser dissociation. In this embodiment, the dissociative material layer 12 can be in a liquid state when it is first formed, so after formation, a first heating process (soft baking) can be further performed to remove the organic solvent in the dissociative material layer 12, so that the dissociative material layer 12 can change from a liquid state to a solid state, thereby forming a first film structure 10. The heating temperature of the first heating process can be less than or equal to 180°C, for example, the heating temperature range of the first heating process is between 60°C and 200°C, to reduce the probability of heat adversely affecting the first release layer 11. In addition, the heating time of the first heating process can be less than or equal to 2 minutes, for example, the heating time range of the first heating process is between 10 seconds and 120 seconds, to ensure that the drying effect is achieved, but the present invention is not limited thereto.

[0023] In some embodiments, the material of the dissociable material layer 12 may be composed of a diamine monomer, a dianhydride monomer, and an organic solvent. Therefore, after performing a first heating process to remove the organic solvent, the material can be transformed into polyimide (PAA). Here, the composition ratio of the diamine monomer, the dianhydride monomer, and the organic solvent can be determined according to the actual design requirements. This invention does not limit this, as long as it can be subsequently made into a polyimide film that can be laser-dissociated, it falls within the protection scope of this invention.

[0024] In some embodiments, the molar ratio of diamine monomer to dianhydride monomer is 1:1 to 1:1.07, for example, the molar ratio of diamine monomer to dianhydride monomer is 1:1.02 to 1:1.05. If the proportion of diamine monomer is too low or the proportion of dianhydride monomer is too high (e.g., the molar ratio of diamine monomer to dianhydride monomer is 1:2.5, 1:3 or above), the adhesion of the dissociated material layer 12 may be reduced. Alternatively, if the proportion of diamine monomer is too low or the proportion of dianhydride monomer is too high (e.g., the molar ratio of diamine monomer to dianhydride monomer is 1:2.5, 1:3 or above), the chemical resistance of the dissociated material layer 12 may be reduced. Alternatively, if the proportion of diamine monomer is too high or the proportion of dianhydride monomer is too low (e.g., the molar ratio of diamine monomer to dianhydride monomer is 2:1 or below), the heat resistance of the dissociated material layer 12 may be reduced.

[0025] In one embodiment, the molar ratio of the diamine monomer to the dianhydride monomer is 1:1.02 to 1:1.05.

[0026] The following will describe in detail the possible embodiments of the various components of the material used in the dissociable material layer 12 of the present invention.

[0027] [<] [Diamine monomer] [>]

[0028] In some embodiments, the diamine monomer may include an aromatic diamine, wherein the aromatic diamine may include selected from 4,4'-(9-fluorenylidene)dianiline (FDA; CAS: 15499-84-0), N,N,N',N'-tetra(paminophenyl)-p-phenylenediamine (CAS: 3283-07-6), p-phenylenediamine (PDA), 3,4'-diaminodiphenyl ether (3,4'-oxydianiline; 3,4'-ODA), 4,4'-diaminodiphenyl ether (4,4'-oxydianiline; 4,4'-ODA), and 4,4'-dichlorodiphenyl ether (4,4'-dichlorodiphenyl). sulfone; 4,4'-DDS; CAS: 80-07-9), 3,5-diamino-1,2,4-triazole (3,5-Diamino-1,2,4-triazole; DATA; CAS: 1455-77-2), N,N'-(4,4'-(9H-fluorene-9,9-diyl)bis(4,1-phenylene))bis(4-aminobenzamide); FDA-ADA; as shown in formula (1)) and mixtures thereof are one of the following groups.

[0029] (Equation 1)

[0030] [<] [Diacid anhydride monomer] [>]

[0031] In some embodiments, the dianhydride monomer temporarily applied to the composition may include an aromatic dianhydride, wherein the aromatic dianhydride may include one selected from the group consisting of N,N'-(9H-fluoren-9-ylidenedi-4,1-phenylene)bis[1,3-dihydro-1,3-dioxo-5-isobenzofurancarboxamide] (N,N'-(9H-fluoren-9-ylidenedi-4,1-phenylene)bis[1,3-dihydro-1,3-dioxo-5-isobenzofurancarboxamide]; FDA-ATA; CAS:867350-98-9), cyclobutane-1,2,3,4-tetracarboxylic dianhydride (CBDA), biphenyl-tetracarboxylic acid dianhydride (BPDA), and mixtures thereof.

[0032] [<] [Organic solvents] [>]

[0033] In some embodiments, the organic solvent used for aceimination may include ketones selected from γ-butyrolactone, 1,3-dimethylimidazolidineone, methyl ethyl ketone, cyclohexanone, cyclopentanone, 4-hydroxy-4-methyl-2-pentanone, etc.; aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene; glycol ethers such as ethylene glycol monoethyl ether, ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, dipropylene glycol diethyl ether, triethylene glycol monoethyl ether, etc. (Celesu); ethyl acetate, butyl acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, dipropylene glycol monomethyl ether acetate, ethanol, propanol, etc. The group consisting of glycols, propylene glycol, carbitol, dimethylacetamide (DMAc), N,N-diethylacetamide, dimethylformamide (DMF), diethylformamide (DEF), N-methylpyrrolidone (NMP), N-ethylpyrrolidone (NEP), 1,3-dimethyl-2-imidazolidineone, N,N-dimethylmethoxyacetamide, dimethyl sulfoxide, pyridine, dimethyl sulfoxide, hexamethylphosphatamide, tetramethylurea, N-methylcaprolactam, tetrahydrofuran, m-dioxane, p-dioxane, 1,2-dimethoxyethane, bis(2-methoxyethyl) ether, 1,2-bis(2-methoxyethoxy)ethane, bis[2-(2-methoxyethoxy)] ether, and mixtures thereof.

[0034] In some embodiments, salts may be added to the organic solvent. The salts may include those selected from the group consisting of alkali metal salts or alkaline earth metal salts and mixtures thereof. The amount of salt added, for example, is less than or equal to 50 wt% of the total weight of the solvent.

[0035] In this embodiment, the thickness 12T of the dissociation material layer 12 can be less than 1 micrometer, and for example, it can be greater than 0.1 micrometer. At this thickness, the dissociation energy required for subsequent laser processing can be reduced. In this way, the probability of thermal damage to the surface of the process element 110 (as shown in FIG. 5) can be reduced, but the present invention is not limited thereto.

[0036] In some embodiments, as shown in FIG6, the thickness 12T of the dissociative material layer 12 can be achieved by a micro-gravure process. In this process, the specific operation method is to place the liquid material of the dissociative material layer 12 (viscosity, for example, less than 50 cps) in a tank, and then coat the material onto the surface of the first release layer 11 by the drive of the middle roller 121 and the two side rollers 122 and 123. In this way, compared with the gravure process of upper and lower roller coating, a thinner and more uniform thickness can be coated, and the film surface formed will also be smoother. Therefore, the dissociative material layer 12 formed by the micro-gravure process can be more competitive in the product, but the present invention is not limited to this.

[0037] Referring to Figure 2, an adhesive layer 22 is formed on the second release layer 21 to constitute the second film structure 20. The adhesive layer 22 can be formed directly on the second release layer 21 by coating, printing or other suitable processes, and the thickness 22T of the adhesive layer 22 can be between 5 micrometers and 10 micrometers. Here, the adhesive layer 22 can be made of any suitable heat-resistant adhesive material, and the present invention is not limited thereto. Some possible specific examples will be listed below.

[0038] In some embodiments, adhesive layer 22 includes an adhesive composition. The adhesive composition comprises an acrylic curable compound and functional monomers in suitable proportions.

[0039] In some embodiments, the monomer of the acrylic curable compound may be a compound having a (meth)acrylate group. For example, the compound with the (meth)acrylate group may include compounds selected from methyl(meth)acrylate, ethyl(meth)acrylate, n-propyl(meth)acrylate, isopropyl(meth)acrylate, n-butyl(meth)acrylate, etc. butyl(meth)acrylate), tert-butyl(meth)acrylate, sec-butyl(meth)acrylate, pentyl(meth)acrylate, 2-ethylhexyl(meth)acrylate, 2-ethylbutyl(meth)acrylate, n-octyl(meth)acrylate, isooctyl(meth)acrylate, isononyl(meth)acrylate, lauryl(meth)acrylate, tetradecyl(meth)acrylate, acrylic acid, methacrylic acid, 2-(meth)acryloyloxyacetic acid, 3-(meth)acryloyloxypropionate. propyl acid), 4-(methyl)acryloyloxybutyric acid (4-(meth)acryloyloxybutyric acid)The following is a group consisting of: acid), 2-hydroxyethyl(meth)acrylate, 2-hydroxypropyl(meth)acrylate, 4-hydroxybutyl(meth)acrylate, 6-hydroxyhexyl(meth)acrylate, 8-hydroxyoctyl(meth)acrylate, 2-hydroxyethylene glycol(meth)acrylate, or 2-hydroxypropylene glycol(meth)acrylate, and combinations thereof.

[0040] In some embodiments, the aforementioned acrylic curable compound may be an acrylic photocurable compound, and the adhesive composition may further include a photoinitiator. For example, photoinitiators include oximes (such as acyloxime, ketoneoxime, or other oximes), benzoin and its derivatives (such as benzoin, benzoin dimethyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin butyl ether), benzoil derivatives, alkyl phenyl ketones (such as α-hydroxyalkyl phenyl ketone (HAPK)), acetylated phosphorus oxides (such as alkyl diacetylated phosphine oxide), benzophenones, thioxanthen-9-ones, and other organic photoinitiators; or diazonium salts, diaryliodonium salts, triarylsulfonium salts, alkylsulfonium salts, aromatic iron salts, and sulfonyl ketones. Cationic photoinitiators such as ketone and triarylsiloxane; or derivatives thereof or combinations thereof.

[0041] In some embodiments, the functional monomer may be a crosslinking agent, a heat-resistant monomer, and / or a diluting monomer.

[0042] In some embodiments, the adhesive composition is solvent-free. The aforementioned organic solvents include, for example, n-hexane, toluene, xylene, methyl isobutyl ketone, etc., used alone or in combination. In this way, the adhesive layer 22 can reduce process contamination in semiconductor processes (such as baking, heat deposition, exposure and development, or other semiconductor processes involving high temperatures or low pressures).

[0043] In some embodiments, the adhesive layer 22 is, for example, a pressure-sensitive adhesive. For instance, the material of the adhesive layer 22 includes acrylic resin, polyurethane resin, polysiloxane resin, a combination of the above materials, or other suitable polymer materials.

[0044] In some embodiments, the adhesive layer 22 may include a photosensitive material, and the adhesive layer 22 reduces its adhesive strength after being exposed to light (e.g., ultraviolet light), allowing it to be debonded by light exposure in subsequent processes. Alternatively, the adhesive layer 22 may include a thermosetting material, and the adhesive layer 22 reduces its adhesive strength after being heated, allowing it to be debonded by heating in subsequent processes. Alternatively, the adhesive layer 22 may include a cryo-debonding material, and the adhesive layer 22 reduces its adhesive strength when cooled to below the glass transition temperature, allowing it to be debonded by cooling in subsequent processes.

[0045] The adhesive layer 22 is suitable for bonding the dissociable material layer 12 to the substrate (e.g., a process component). The adhesive layer 22 can bond with other materials through methods including adsorption, diffusion, electrostatic adsorption, mechanical interlocking, and chemical bonding.

[0046] In some embodiments, the raw materials for the adhesive layer 22 include oligomers, monomers, initiators, and additives. For example, the cured adhesive layer 22 includes acrylic resin or other suitable materials. In some embodiments, the oligomer includes polyester acrylate, polyurethane acrylate, polyether acrylate, or combinations thereof.

[0047] In some embodiments, the monomer in the raw material of the adhesive layer 22 has a weight ratio of 20 wt% to 50 wt%, for example, any range from 20 wt%, 30 wt%, 40 wt%, 50 wt%, or 20 wt% to 50 wt%. In some embodiments, the monomer includes monofunctional monomers, difunctional monomers, polyfunctional monomers, or combinations thereof.

[0048] In some embodiments, the monofunctional monomer is, for example, isodecyl acrylate (IDA), tetrahydrofurfuryl acrylate (THFA), isobornyl acrylate (IBOA), or 2-phenoxyethyl acrylate (PHEA), wherein the chemical structures of isodecyl acrylate, tetrahydrofurfuryl acrylate, isobornyl acrylate, and 2-phenoxyethyl acrylate are shown in Equations 2, 3, 4, and 5, respectively.

[0049] (Equation 2)

[0050] (Equation 3)

[0051] (Equation 4)

[0052] (Equation 5)

[0053] In some embodiments, the bifunctional monomer is, for example, hexanediol diacrylate (HDDA) or polyethylene glycol (600) diacrylate (PEG(600)DA), wherein the chemical structures of hexanediol diacrylate and polyethylene glycol (600) diacrylate are shown in Equation 6 and Equation 7, respectively.

[0054] (Equation 6)

[0055] (Equation 7)

[0056] In some embodiments, the multifunctional monomer is, for example, trimethylolpropane triacrylate (TMPTA) or dipentaerythritol hexaacrylate (DPHA), wherein the chemical structures of trimethylolpropane triacrylate and dipentaerythritol hexaacrylate are as follows (Equation 8) and (Equation 9), respectively.

[0057] (Equation 8)

[0058] (Equation 9)

[0059] The initiator in the raw material of adhesive layer 22 is suitable for initiating polymerization and bridging reactions. For example, one or more photoinitiators are used to induce polymerization and bridging reactions between monomers and oligomers. In some embodiments, the photoinitiator includes a free radical photoinitiator. In some embodiments, the photoinitiator in the raw material of adhesive layer 22 has a weight percentage of less than or equal to 10 wt%, for example, any value below 9 wt%, 8 wt%, 7 wt%, 6 wt%, 5 wt%, 4 wt%, 3 wt%, 2 wt%, 1 wt%, or 10 wt%. In some embodiments, the photoinitiator is suitable for initiating polymerization reactions by absorbing ultraviolet light.

[0060] In some embodiments, the polyester acrylate resin, polyurethane acrylate resin, or polyether acrylate resin uses a free radical photoinitiator, such as 1-hydroxycyclohexyl phenyl ketone or phenyl bis(2,4,6-trimethylbenzoyl)-phosphine oxide, with the chemical structures shown in Formula 10 and Formula 11, respectively.

[0061] (Equation 10)

[0062] (Equation 11)

[0063] In some embodiments, the raw materials of the adhesive layer 22 further include additives. Additives include, for example, surfactants, stabilizers, dyes, solvents, or other materials. In some embodiments, additives include, for example, conductive particles, conductive fibers, conductive polymers, or other suitable conductive materials, thus giving the adhesive layer 22 antistatic properties. In some embodiments, additives include difunctional acrylic oligomers (e.g., aliphatic urethane diacrylate oligomers), which can improve the bridging properties of the adhesive layer 22, further enhancing its chemical resistance and heat resistance, and reducing the problem of residual adhesive after removing the adhesive layer 22. In some embodiments, additives include difunctional monomers (e.g., ethoxylated bisphenol A diacrylate, 1,6-hexanediol diacrylate, or combinations thereof), which can further enhance the bridging strength of the adhesive layer 22.

[0064] In this embodiment, the adhesive layer 22 can also be in the form of double-sided tape, that is, it can be sandwiched between the second release layer 21 and the third release layer 23. When it is to be used, the third release layer 23 is removed to form the second film structure 20. The thickness 21T of the second release layer 21 can be between 0.025 mm and 0.1 mm (for example, 50 micrometers), and the thickness 22T of the third release layer 23 can be between 0.025 mm and 0.1 mm (for example, 38 micrometers). The materials of the second release layer 21 and the third release layer 23 can be similar to the first release layer 11, which will not be described in detail here.

[0065] Please refer to Figure 3. Assemble the first membrane structure 10 and the second membrane structure 20 into a membrane assembly 100. In this embodiment, after assembly, the dissociative material layer 12 and the adhesive layer 22 can be sandwiched between the first release layer 11 and the second release layer 21, and the dissociative material layer 12 and the adhesive layer 22 can be in direct contact. Accordingly, through the above steps, a temporary functional element in the intermediate stage (including a membrane assembly 100 of a solid polyimide laser dissociative layer 12 and an adhesive layer 22) can be manufactured.

[0066] Please refer to Figures 4 and 5. The film component 100 is attached to the process element 110. The thickness 110T of the process element 110 can be determined according to the specifications of the semiconductor device to be processed. This invention does not limit it. For example, the thickness 110T of the process element 110 can be a circular glass wafer or a square glass wafer between 0.1 mm and 3.0 mm.

[0067] Next, a second heating process (hard baking) can be performed on the film assembly 100 to imidize (dehydrate and close the ring) the dissociation material layer 12 into polyimide (PI) to achieve its desired functionality (heat resistance, adhesion, or chemical resistance, etc.), wherein the temperature of the first heating process is lower than the temperature of the second heating process. For example, the heating temperature range of the second heating process is between 200°C and 300°C, and the heating time range is between 10 minutes and 60 minutes, but the present invention is not limited thereto. Accordingly, the temporary functional element (including the film assembly 100 of solid polyimide laser dissociation layer 12 and adhesive layer 22) designed and manufactured through the above steps in the semiconductor device manufacturing method of the present invention has advantages such as higher ease of use, better film uniformity, and lower manufacturing cost. Therefore, when it is attached to the process element (omitting the coating process), the product yield can be effectively improved, the manufacturing time can be shortened, and the manufacturing cost can be reduced.

[0068] Furthermore, after performing the second heating process, a laser process can be performed to remove the film component 100 (not shown). Since this embodiment has a thinner dissociation material layer 12, a smaller dissociation energy can be used to reduce the probability of thermal damage to the surface of the process element 110. For example, when the wavelength of the laser process is 355 nanometers or 532 nanometers, the energy density of the laser process is between 1.0W and 6.0W. However, the present invention is not limited to this, and the specific parameters of the laser process can be determined according to the actual design requirements.

[0069] On the other hand, since current coating equipment is designed for circular process components (such as circular glass wafers), when it is to be applied to large-size semiconductor panel-level packaging (FOPLP), it can only set square grooves within the circle. As a result, when the viscosity of the coating liquid is too high, there will be poor coating uniformity; when the viscosity of the coating liquid is too low, there will be fisheye phenomena (such as bubbles, volcanoes, and poor wetting). At the same time, material will splash outside the grooves, resulting in waste. In addition, this method requires larger drying equipment and cleaning of the equipment after each coating. When the panel size is adjusted, the groove size needs to be adjusted accordingly. Therefore, when the process component 110 is a square glass wafer for semiconductor panel-level packaging, the film component 100 can avoid the aforementioned problems and thus has a greater product competitiveness.

[0070] In some embodiments, the film assembly 100 can be attached to the process element 110 through the following steps. First, as shown in FIG4, after removing the second release layer 21, the dissociative material layer 12 and the first release layer 11 can be bonded to the process element 110 through the adhesive layer 22. Since the size of the film assembly 100 in this embodiment is larger than the size of the process element 110, after bonding, a trimming process can be performed on the adhesive layer 22, the dissociative material layer 12 and the first release layer 11 so that the edges 12s of the dissociative material layer 12 and the edges 22s of the adhesive layer 22 are aligned with the edges 110s of the process element 110. Then, as shown in FIG5, the first release layer 11 is removed. However, the present invention is not limited to this. In embodiments not shown, the film assembly corresponding to the size of the process element can also be pre-cut, so that the first release layer 11 can be directly removed after it is attached to the process element. Here, since the membrane assembly 100 can be trimmed or pre-cut to fit the size of the process element 110, the membrane assembly 100 has better flexibility in use.

[0071] It should be noted that the above-described process steps can be applied to any stage in the manufacturing method of a semiconductor device that requires temporary functional elements, such as wafer thinning, supporting the back of the wafer, and circuit fabrication. This invention does not limit these steps.

[0072] In summary, the temporary functional element (film assembly) manufactured through step design in the semiconductor device manufacturing method of the present invention has advantages such as higher ease of use, better film uniformity and lower manufacturing cost. Therefore, when it is attached to the process element, it can effectively improve product yield, shorten manufacturing time and reduce manufacturing cost.

[0073] Although the present invention has been disclosed above by way of embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

[0074] 10: First membrane structure 11: First release layer 12: Dissociation of material layers 20: Second membrane structure 21: Second release layer 22: Adhesive layer 23: Third release layer 100: Membrane Module 110: Process components 12s, 22s, 110s: Edge 11T, 12T, 22T, 23T, 110T: Thickness 121, 122, 123: Rollers

Claims

1. A method for manufacturing a semiconductor device, comprising: A dissociative material layer is formed on the first release layer; A first heating process is performed to transform the dissociative material layer from a liquid state to a solid state, thereby forming a first film structure; an adhesive layer is formed on a second release layer to form a second film structure; the first film structure and the second film structure are assembled into a film assembly; the film assembly is attached to a process element; a second heating process is performed on the film assembly; and a laser process is performed to remove the dissociative material layer, wherein the wavelength of the laser process is 355 nanometers or 532 nanometers.

2. A method for manufacturing a semiconductor device as claimed in claim 1, wherein the temperature of the first heating process is lower than the temperature of the second heating process.

3. A method for manufacturing a semiconductor device as claimed in claim 1, wherein the heating temperature of the first heating process is in the range of 60°C to 200°C, and the heating time of the first heating process is in the range of 10 seconds to 120 seconds.

4. A method for manufacturing a semiconductor device as claimed in claim 1, wherein the heating temperature of the second heating process is in the range of 200°C to 300°C, and the heating time of the second heating process is in the range of 10 minutes to 60 minutes.

5. A method for manufacturing a semiconductor device as claimed in claim 1, wherein the energy density of the laser process is between 1 watt and 6 watts.

6. A method of manufacturing a semiconductor device as claimed in claim 1, wherein the dissociative material layer is formed by a microgravure process.

7. A method of manufacturing a semiconductor device as claimed in claim 1, wherein the step of attaching the film assembly to the process element further comprises: After removing the second release layer, the release material layer and the first release layer are attached to the process element through the adhesive layer; A trimming process is performed on the adhesive layer, the release material layer and the first release layer; and the first release layer is removed.

8. A method of manufacturing a semiconductor device as claimed in claim 7, wherein after performing the trimming process, the edges of the dissociative material layer and the adhesive layer are aligned with the edges of the process element.

9. A method for manufacturing a semiconductor device as claimed in claim 1, wherein the process element is a square glass wafer.

Images