In-situ wafer monitoring with dynamic backside gas feedback control as wafer bow countermeasure

TW202633326APending Publication Date: 2026-08-01TOKYO ELECTRON LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
TOKYO ELECTRON LTD
Filing Date
2025-09-22
Publication Date
2026-08-01

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Abstract

Aspects of the present disclosure provide an electrostatic chuck (ESC) / backside gas (BSG) system. For example, the ESC / BSG system can include an ESC and a BSG cooling device integrated with the ESC. The ESC can be configured to generate an electrostatic chucking force according to an electrostatic voltage applied thereto to clamp a semiconductor structure with a backside placed onto the ESC. The BSG cooling device can be configured to introduce to the backside of the semiconductor structure a backside gas at a backside gas pressure. The ESC / BSG system can further include a monitoring system configured to monitoring bowing of the semiconductor structure, and a controller coupled between the monitoring system and the ESC and the BSG cooling device. The controller can be configured to adjust the electrostatic voltage and / or the backside gas pressure according to the bowing of the semiconductor structure.
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