Device and method for bonding of substrates

TW202633335APending Publication Date: 2026-08-01EV GRP E THALLNER GMBH
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
EV GRP E THALLNER GMBH
Filing Date
2017-02-16
Publication Date
2026-08-01

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    Figure TWG2TA001071876_003
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Abstract

The present invention relates to a method for bonding a first substrate (2) and a second substrate (2') to the contact surfaces (2o, 2o') of the substrates (2, 2') using the following steps, specifically the following sequence: - holding the first substrate (2) to a first sample holder surface (1o) of a first sample holder (1) using a holding force FH1 and holding the second substrate (2') to a second sample holder surface (1o') of a second sample holder (1') using a holding force FH2; - bringing the contact surfaces (2o, 2o') into contact at a bonding initiation point (20) and heating at least the second sample holder surface (1o') to a heating temperature TH; - bonding the first substrate (2) and the second substrate (2') along a bonding wave extending from the bonding initiation point (20) to the side edges (2s, 2s') of the substrates (2, 2'); Its characteristic is that the heating temperature TH decreases at the surface (1o') of the second sample retainer during the engagement. The present invention relates to a method for bonding a first substrate (2) with a second substrate (2’) at contact faces (2o, 2o’) of the substrates (2, 2’) with the following steps, in particular the following sequence: - holding of the first substrate (2) to a first sample holder surface (1o) of a first sample holder (1) with a holding force FH1 and holding of the second substrate (2’) to a second sample holder surface (1o’) of a second sample holder (1’) with a holding force FH2, - contacting of the contact faces (2o, 2o’) at a bond initiation point (20) and heating of at least the second sample holder surface (1o’) to a heating temperature TH, - bonding of the first substrate (2) with the second substrate (2’) along a bonding wave running from the bond initiation point (20) to the side edges (2s, 2s’) of the substrates (2, 2’), characterised in that heating temperature TH is reduced at the second sample holder surface (1o’) during the bonding.
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