Manufacturing method of heat-treated semiconductor wafer

Abstract

It is an object to enable to take both the quality specifications and the productivity in a single wafer processing heat treatment furnace into consideration to properly control the lifting speed to perform the heat treatment of semiconductor wafers. The solution is a manufacturing method of heat-treated semiconductor wafers including creating a database of relationships between at leat one statistical parameter of quality, seltected from a group consisting of flatness, LPD, liftpin mark area and liftpin mark height, and lift operation parameters; practicing calculations to determine process capability parameters for lift operation parameter combinations based on at least one specification information of quality, seltected from a group consisting of flatness, LPD, liftpin mark area and liftpin mark height, and the database for a plurality of lift operation parameter combinations; performing judgement of acceptance on the plurality of lift operation parameter combinations based on the results of the calculations; selecting lift operation parameter combinations whose toal operation period of the lift operations is equal to or less than a threshold value from the lift operation parameter combinations judged as acceptance in the judgement of acceptance, and setting the selected lift operation parameter combinations in a single wafer processing heat treatment furnace whose lift speed can be set variable; and heat-treating semiconductor wafers on the single wafer processing heat treatment furnace.

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