Components for semiconductor manufacturing equipment

Abstract

The wafer stage 10 of the present invention includes a ceramic plate 20, a plug placement hole 24, and a plug 50. The plug 50 is disposed in the plug placement hole 24 and has a gas flow channel 52. When observing the longitudinal section of the plug 50, if the vertical length of the gas flow channel 52 is set to d1 [mm], the vertical length of the plug body 51 between the gas flow channels 52 is set to d2 [mm], the relative permittivity of the plug body 51 is set to εr, and the number of gas flow channels 52 arranged vertically on the longitudinal section of the plug 50 is set to x [number], then F = εr * d1 / {x * (εr * d1 + d2)} ≤ 0.25.

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