Substrate processing apparatus and its working method

Abstract

This invention relates to a substrate processing apparatus and its operating method for performing heating and cooling processes on a semiconductor substrate. The substrate processing apparatus may include: a support chuck including at least one light-absorbing portion; a plate including at least one laser and a cooling line; and a support frame with a through-hole formed in the central portion of the plate, one side of which is accommodated in a groove formed in the central portion of the support chuck. When a first process for raising the temperature is performed on the semiconductor substrate disposed on the support chuck, the support chuck and the plate may be separated as the support frame is raised, and at least one laser irradiates at least one light-absorbing portion with laser light. When a second process for lowering the temperature is performed on the semiconductor substrate, the support chuck and the plate may come into contact as the support frame is lowered, and coolant is supplied via the cooling line.

Description

[Technical Field]

[0001] This invention relates to a semiconductor manufacturing process apparatus, and more specifically, to a substrate processing apparatus and its operating method that utilizes a single chamber to perform a heating process and a cooling process on a semiconductor substrate. [Previous Technology]

[0002] Generally, semiconductor process equipment can be configured based on at least one process zone for performing processes on a semiconductor substrate. Each process zone for performing processes on the semiconductor substrate can create a process environment based on a specific temperature corresponding to the process, and each process zone can be maintained at a preset specific temperature by temperature control. The semiconductor process equipment can utilize a conveyor implemented in a linear or rotary manner to move the semiconductor substrate to the process zone for performing the process according to the process steps.

[0003] However, the semiconductor process equipment described above inevitably increases in size due to the inclusion of conveyor belts of a certain size or larger. Furthermore, when a problem occurs in a specific process area, the entire semiconductor process equipment must be shut down, and even when the equipment is not in use, continuous power consumption is necessary to maintain the temperature of the process area. Therefore, a solution is needed that can improve the efficiency of equipment operation while reducing the size of the semiconductor process equipment.

[0004] In this regard, see Korean Patent Publication No. 10-2013-0135110A and Korean Patent Publication No. 10-2015-0081723A. [Summary of the Invention]

[0005] [The problem the invention aims to solve]

[0006] The purpose of this invention is to provide a substrate processing apparatus and its operating method for performing heating and cooling processes on a semiconductor substrate using a single chamber.

[0007] The object of the present invention is to provide a substrate processing apparatus and a method thereof for performing a heating process using a laser and a cooling process using a plate.

[0008] The problems to be solved by the present invention are not limited to the above-mentioned problems. Other problems not mentioned can be clearly understood by those skilled in the art from the following description.

[0009] [Means used to solve problems]

[0010] A substrate processing apparatus according to an embodiment of the present invention may include: a support chuck including at least one light-absorbing portion, a plate including at least one laser and a cooling line, and a support frame having a through hole formed through the central portion of the plate, one side of the support frame being received in a groove formed in the central portion of the support chuck; when a first process for temperature increase is performed on a semiconductor substrate disposed on the support chuck, the support chuck and the plate may be separated as the support frame is raised, and the at least one laser irradiates the at least one light-absorbing portion with laser light; when a second process for temperature decrease is performed on the semiconductor substrate, the support chuck and the plate may come into contact as the support frame is lowered, and coolant is supplied via the cooling line.

[0011] In an embodiment, when the first process is performed, the support frame can be raised to a distance corresponding to a spacing distance determined based on at least one of semiconductor process method information, information related to the specifications of the at least one light-absorbing portion, and information related to the specifications of the at least one laser.

[0012] In an embodiment, when the support chuck includes a plurality of light-absorbing portions and the plate includes a plurality of lasers, each of the plurality of lasers can irradiate at least a portion of the plurality of light-absorbing portions corresponding to each of the plurality of lasers based on an output wavelength, wherein the output wavelength is determined based on at least one of semiconductor process method information, information related to the specifications of each of the plurality of light-absorbing portions, and information related to the specifications of each of the plurality of lasers.

[0013] In an embodiment, each of the plurality of lasers may irradiate at least a portion of the plurality of light-absorbing portions corresponding to each of the plurality of lasers based on an output direction, the output direction being determined based on at least one of the semiconductor process method information, information related to the specifications of each of the plurality of light-absorbing portions, and information related to the specifications of each of the plurality of lasers.

[0014] In an embodiment, the cooling line may perform coolant supply based on at least one of semiconductor process method information, information related to the specifications of the board, information related to the specifications of the cooling line, and information on the coolant used.

[0015] In an embodiment, the support chuck may further include a temperature sensor for measuring the temperature of the semiconductor substrate.

[0016] In an embodiment, the cooling line may be formed as a first type of cooling line integrating an inlet for supplying the coolant and an outlet for discharging the coolant, or as a second type of cooling line where the inlet and the outlet are independent.

[0017] In an embodiment, the coolant may include at least one of hydrocarbons, halocarbons, organic compounds, and inorganic compounds.

[0018] A substrate processing apparatus according to an embodiment of the present invention may include: a support chuck including at least one light-absorbing portion, the position of the support chuck being fixed within a chamber; a plate including at least one laser and a cooling line; and a support frame housed in a groove formed in the center of the plate; when a first process for temperature increase is performed on a semiconductor substrate disposed on the support chuck, the support chuck and the plate may be separated as the support frame is lowered, and the at least one laser irradiates the at least one light-absorbing portion with laser light; when a second process for temperature decrease is performed on the semiconductor substrate, the support chuck and the plate may come into contact as the support frame is raised, and coolant is supplied via the cooling line.

[0019] In a method of operating a substrate processing apparatus for performing temperature control on a semiconductor substrate according to an embodiment of the present invention, the method may include: a step of placing the semiconductor substrate, which flows in from the outside, on a support chuck; a step of separating the support chuck from a plate and irradiating at least one light-absorbing portion in the support chuck with a laser using at least one laser in the plate in order to perform a first process for raising the temperature of the semiconductor substrate; and a step of contacting the support chuck with the plate and supplying coolant via a cooling line in the plate in order to perform a second process for lowering the temperature of the semiconductor substrate.

[0020] [The Effects of the Invention]

[0021] According to an embodiment of the present invention, a heating process and a cooling process are performed on a semiconductor substrate using a single chamber, thereby enabling miniaturization of semiconductor process equipment and reducing the cycle time for producing semiconductor substrates.

[0022] According to an embodiment of the present invention, a laser is used to perform a heating process and a plate is used to perform a cooling process, thereby reducing the standby power of semiconductor process equipment and achieving a stable temperature gradient and detailed temperature control of the semiconductor substrate.

[0023] The effects of the present invention are not limited to the effects described above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

Implementation Method

[0024] In the following, exemplary embodiments of the present invention will be described in detail with reference to the figures. However, the present invention is not limited to or restricted by the exemplary embodiments. Unless otherwise defined, all terms (including technical and scientific terms) used in this specification are intended to be understood by one of ordinary skill in the art to which this invention pertains, and may be changed as appropriate based on the intent of those skilled in the art, precedents, or the emergence of new technologies in the field.

[0025] Furthermore, unless otherwise explicitly defined, commonly used predefined terms should not be interpreted ideally or over-interpreted. In certain cases, the applicant may arbitrarily choose terms; in such cases, the meaning of the chosen terms will be detailed in the description. Therefore, the terms used in this invention should be defined based on their meaning and the content of the entire specification, rather than simply their names.

[0026] Throughout this specification, unless otherwise stated, "including" a component means that it also includes other components, not excludes other components. Furthermore, unless otherwise specified, the singular form used in this specification also includes the plural form. Additionally, the expression "at least one of a, b, and / or c" throughout this specification may include "a only," "b only," "c only," "a and b," "a and c," "b and c," or "all of a, b, and c."

[0027] On the other hand, the terms "first and / or second" used in this specification may be used to describe various constituent elements, but they are only used to distinguish one constituent element from another and are not intended to be limited to the constituent elements referred to. For example, without departing from the scope of the invention, a first constituent element may be named a second constituent element, and a second constituent element may be named a first constituent element.

[0028] Furthermore, the terms "...section" and "...module" used in this specification refer to a unit that processes at least one function or action, which can be implemented in hardware or software form, or in a combination of hardware and software. Additionally, in this specification, embodiments of the present invention can be represented by functional block structures and various processing steps. Such functional blocks can be implemented by various numbers of hardware and / or software structures that perform specific functions. For example, embodiments of the present invention can employ, for instance, memory, processors, logic, lookup tables, etc., which can perform various functions by the control of one or more microprocessors or other control devices.

[0029] Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings. In describing the embodiments, descriptions of technical content well-known in the art and not directly related to the present invention will be omitted. This is to omit unnecessary descriptions, thereby more clearly conveying the spirit of the present invention without obscuring it. For the same reason, some constituent elements may be exaggerated, omitted, or shown in a simplified manner in the accompanying drawings. Furthermore, the dimensions of each constituent element do not perfectly reflect the actual dimensions. Throughout this specification, the same reference numerals may refer to the same or corresponding constituent elements.

[0030] FIG1 is a block diagram illustrating a substrate processing system 10 according to an embodiment of the present invention.

[0031] Referring to FIG1, the substrate processing system 10 of the present invention may include a substrate processing apparatus 110 and an electronic device 120.

[0032] The substrate processing apparatus 110 of the embodiments of the present invention can perform semiconductor processing on a substrate disposed on the substrate processing apparatus 110, and can be provided in a semiconductor processing equipment. In the embodiments of the present invention, the substrate disposed on the substrate processing apparatus 110 can be at least one of a semiconductor wafer, a mask, a glass substrate, and a liquid crystal display (LCD).

[0033] Hereinafter, the substrate processing apparatus 110 according to embodiments of the present invention will be described as an apparatus for performing a reflow process for producing semiconductor wafers (chips), but this is only for the sake of illustrative convenience and does not limit the scope of the present invention. According to various embodiments of the present invention, the substrate processing apparatus 110 can be an apparatus for performing any process in various manufacturing processes for producing semiconductor wafers that requires temperature control, such as plasma processes, packaging processes, reflow processes, etching processes, deposition processes, photolithography processes, and thermal processing processes.

[0034] The substrate processing apparatus 110 according to an embodiment of the present invention can perform a heating process and a cooling process on a semiconductor substrate using a single chamber. The substrate processing apparatus 110 according to an embodiment of the present invention may include a laser device for performing the heating process and a plate device for performing the cooling process. In this specification, a heating process can refer to any process that requires an increase in temperature of the substrate processing apparatus 110, and a cooling process can refer to any process that requires a decrease in temperature of the substrate processing apparatus 110. The specific configuration and structure of the substrate processing apparatus 110 according to an embodiment of the present invention will be described in detail with reference to FIGS. 2 to 10b, which will be described later.

[0035] The electronic device 120 can control the operation of the substrate processing apparatus 110 based on semiconductor process recipe information. In some embodiments, the semiconductor process recipe information can be stored in memory in the electronic device 120, and the semiconductor process recipe information may include information related to the semiconductor process executed in the substrate processing apparatus 110. Specifically, the semiconductor process recipe information may include at least one of semiconductor process information executed in the substrate processing apparatus 110, heating temperature information of a heating process executed in the substrate processing apparatus 110, and cooling temperature information of a cooling process. The electronic device 120 can monitor the operating state of the substrate processing apparatus 110, process necessary information corresponding to the operating state of the substrate processing apparatus 110 and the semiconductor process recipe information, and can control at least one structure in the substrate processing apparatus 110 to change the temperature of the substrate processing apparatus 110.

[0036] On the other hand, although the substrate processing apparatus 110 and the electronic device 120 are shown as separate structures in FIG1, this is only one embodiment according to the present invention and does not limit the form of the substrate processing system 10 according to the present invention. Specifically, as shown in FIG1, the substrate processing apparatus 110 and the electronic device 120 can be electrically connected or wirelessly connected. When the substrate processing apparatus 110 and the electronic device 120 are wirelessly connected, the substrate processing apparatus 110 and the electronic device 120 may each include a communication module for communication. Alternatively, the electronic device 120 may also be disposed in the substrate processing apparatus 110.

[0037] Unlike conventional semiconductor process equipment that uses multiple cavities corresponding to each process step to perform processes on a semiconductor substrate, the substrate processing system 10 according to an embodiment of the present invention can use a single cavity to process multiple process steps, thus enabling miniaturization of the semiconductor process equipment. Furthermore, unlike conventional process equipment that uses a conveyor belt to move the substrate to the process area corresponding to each process step in order to perform each process step, the substrate processing system 10 according to an embodiment of the present invention can process multiple process steps in one process area, thus reducing the cycle time for producing semiconductor substrates.

[0038] On the other hand, unlike conventional process equipment that continuously consumes power to maintain the temperature of the process area corresponding to each process step, the substrate processing system 10 according to an embodiment of the present invention executes temperature changes for the process more quickly based on laser equipment and board equipment, thereby reducing the standby power of semiconductor process equipment and enabling stable temperature gradient and detailed temperature control of the semiconductor substrate.

[0039] On the other hand, although the substrate processing system 10 is shown in FIG1 as including a substrate processing device 110 and an electronic device 120, this is only one embodiment of the present invention and does not limit the form of the substrate processing system 10 according to the present invention. Specifically, in some embodiments, the substrate processing system 10 may include a plurality of substrate processing devices 110 and at least one electronic device 120. When the substrate processing system 10 includes a plurality of substrate processing devices 110 and an electronic device 120, the plurality of substrate processing devices 110 can be controlled by one electronic device 120, and when the substrate processing system 10 includes a plurality of substrate processing devices 110 and a plurality of electronic devices 120, each of the plurality of substrate processing devices 110 can be controlled by the electronic device 120 corresponding to each of the plurality of substrate processing devices 110.

[0040] FIG2 is a cross-sectional view of a substrate processing apparatus 200 according to an embodiment of the present invention.

[0041] The substrate processing apparatus 200 shown in FIG2 can correspond to the substrate processing apparatus 110 shown in FIG1 (refer to FIG1). Referring to FIG2, the substrate processing apparatus 200 according to an embodiment of the present invention may include a support chuck 210, a plate 220 and a support frame 230. The support chuck 210 may include a plurality of light absorption portions 211_1, 211_2, 211_3 and 211_4. The plate 220 may include a plurality of lasers 221_1, 221_2, 221_3 and 221_4 and a cooling line 222.

[0042] In an embodiment of the present invention, the support chuck 210 can support a substrate SUB, which is the object of a semiconductor process performed by the substrate processing apparatus 200. The substrate SUB can be disposed on a first surface of the support chuck 210, and when an externally supplied substrate SUB is disposed on the first surface of the support chuck 210, the substrate processing apparatus 200 can perform a process on the substrate SUB. On the other hand, in an embodiment, a plurality of light-absorbing portions 211_1, 211_2, 211_3, and 211_4 can be respectively accommodated or inserted into a plurality of grooves or recesses formed in the support chuck 210. Each of the plurality of light-absorbing portions 211_1, 211_2, 211_3, and 211_4 may have one surface configured to substantially form a plane with one surface of the support chuck 210. In this specification, the plane formed by one surface of the support chuck 210 and one surface of each of the plurality of light-absorbing portions 211_1, 211_2, 211_3, and 211_4 may be referred to as the second surface of the support chuck 210. The second surface of the support chuck 210 may be parallel to the first surface of the mounting substrate SUB. FIG3a, described later, will provide a detailed description of the configuration of the plurality of light-absorbing portions 211_1, 211_2, 211_3, and 211_4 according to an embodiment of the present invention.

[0043] In this embodiment, when the substrate processing apparatus 200 performs a heating process, each of the plurality of light-absorbing portions 211_1, 211_2, 211_3, 211_4 can absorb laser energy irradiated from at least one of the plurality of lasers 221_1, 221_2, 221_3, 221_4, and can heat the substrate SUB on the support chuck 210 based on the absorbed light energy. The support chuck 210 can transfer the laser energy absorbed from the plurality of light-absorbing portions 211_1, 211_2, 211_3, 211_4 to a first surface of the support chuck 210. In order to transfer the laser energy, the support chuck 210 may include a metallic material.

[0044] In an embodiment of the present invention, the plate 220 may be configured parallel to the support chuck 210. A plurality of lasers 221_1, 221_2, 221_3, and 221_4 for increasing the temperature of the substrate SUB may be accommodated or inserted into a plurality of slots or recesses formed in the plate 220. The light irradiation portion of each of the plurality of lasers 221_1, 221_2, 221_3, and 221_4 may be configured to form a plane with a surface of the plate 220. The plane formed by the surface of the plate 220 and the light irradiation portion of each of the plurality of lasers 221_1, 221_2, 221_3, and 221_4 may be referred to as the first surface of the plate 220, and the first surface of the plate 220 may be parallel to the second surface of the support chuck 210. On the other hand, a cooling line 222 for reducing the temperature of the substrate SUB may be implemented in a tube shape and configured within the plate 220. In Figures 3a and 3b described later, the configuration of the cooling line 222 according to an embodiment of the present invention will be described in detail.

[0045] In this embodiment, a portion of the plurality of lasers 221_1, 221_2, 221_3, 221_4 and cooling lines 222 in the board 220 can be operated by the control of the electronic device 120 (see FIG. 1). Specifically, when the substrate processing apparatus 200 performs a heating process on the substrate SUB, at least a portion of the plurality of lasers 221_1, 221_2, 221_3, 221_4 in the board 220 can be operated by the control of the electronic device 120. On the other hand, when the substrate processing apparatus 200 performs a cooling process on the substrate SUB, the cooling lines 222 in the board 220 can be operated by the control of the electronic device 120.

[0046] According to an embodiment of the present invention, the support frame 230 can pass through a through hole formed in the central portion of the plate 220. One side of the support frame 230 can be fixed in the form of receiving or inserting into a groove or recess formed in the central portion of the support chuck 210. The support frame 230 can be moved up and down under the control of the electronic device 120. Specifically, when the substrate processing apparatus 200 according to an embodiment of the present invention performs a heating process, the support frame 230 can be raised under the control of the electronic device 120, and the support chuck 210 and the plate 220 can be separated as the support frame 230 is raised. On the other hand, when the substrate processing apparatus 200 according to an embodiment of the present invention performs a cooling process, the support frame 230 can be lowered under the control of the electronic device 120, and the support chuck 210 and the plate 220 can contact each other as the support frame 230 is lowered. The board 220 in the substrate processing apparatus 200 shown in Figure 2 can be fixed and configured in a specific position, independent of the up-and-down movement of the support frame 230, and the position of the support chuck 210 can change according to the up-and-down movement of the support frame 230. The specific operation of the substrate processing apparatus 200 for each process will be described in detail in Figures 6 and 8, which will be described later.

[0047] On the other hand, the cross-sectional view of the substrate processing apparatus 200 shown in FIG2 only shows the (first to fourth) light-absorbing portions 211_1, 211_2, 211_3, and 211_4. However, this is only a cross-section showing the substrate processing apparatus 200 according to one embodiment of the present invention and does not limit the structure of the substrate processing apparatus 200 according to the embodiment of the present invention. Similarly, the cross-sectional view of the substrate processing apparatus 200 shown in FIG2 only shows the (first to fourth) lasers 221_1, 221_2, 221_3, and 221_4. However, this is also only a cross-section showing the substrate processing apparatus 200 according to one embodiment of the present invention and does not limit the structure of the substrate processing apparatus 200 according to the embodiment of the present invention. Relatedly, a detailed description will be provided with reference to FIGS. 3a and 3b, which will be described later.

[0048] FIG3a is a top view of the support chuck 310 of an embodiment of the present invention, and FIG3b is a top view of the plate 320 of an embodiment of the present invention.

[0049] Referring to FIG3a, a support chuck 310 according to an embodiment of the present invention may include a plurality of light-absorbing portions (311_1, 311_2, ..., 311_18) and a support frame 330. The support chuck 310 shown in FIG3a may correspond to the support chuck 210 shown in FIG2 above (refer to FIG2), a portion of the plurality of light-absorbing portions (311_1, 311_2, ..., 311_18) shown in FIG3a may correspond to the plurality of light-absorbing portions 211_1, 211_2, 211_3, 211_4 shown in FIG2 above (refer to FIG2), and the support frame 330 in the support chuck 310 may correspond to at least a portion of the support frame 230 shown in FIG2 above (refer to FIG2).

[0050] In an embodiment, each of the plurality of light-absorbing portions (311_1, 311_2, ..., 311_18) may include a light-absorbing material that absorbs laser light irradiated from the laser. In FIG. 3a, each of the plurality of light-absorbing portions (311_1, 311_2, ..., 311_18) is shown to be formed in a circular shape, but this is only to illustrate one embodiment of the invention and does not limit each of the plurality of light-absorbing portions (311_1, 311_2, ..., 311_18) formed according to the embodiment of the invention. According to an embodiment of the invention, each of the plurality of light-absorbing portions (311_1, 311_2, ..., 311_18) may be formed in any form for absorbing laser light.

[0051] Furthermore, in FIG3a, the first to eighteenth light-absorbing portions 311_1, 311_2, ..., 311_18 are shown to be radially arranged around the support frame 330. However, this is only to show one configuration according to an embodiment of the present invention and does not limit the configuration of the plurality of light-absorbing portions (311_1, 311_2, ..., 311_18) according to an embodiment of the present invention. According to an embodiment of the present invention, the plurality of light-absorbing portions (311_1, 311_2, ..., 311_18) can be configured in any form for absorbing lasers. In order to improve the efficiency of laser absorption, the area of ​​the plurality of light-absorbing portions (311_1, 311_2, ..., 311_18) can occupy more than 50% of the area of ​​the support chuck 310.

[0052] On the other hand, referring to FIG3b, a plate 320 according to an embodiment of the present invention may include a plurality of lasers (321_1, 321_2, ..., 321_18), a cooling line 322, and a support frame 330. At least a portion of the plurality of lasers (321_1, 321_2, ..., 321_18) shown in FIG3b may correspond to the plurality of lasers 221_1, 221_2, 221_3, 221_4 shown in FIG2 above, and the cooling line 322 shown in FIG3b may correspond to the cooling line 222 shown in FIG2 above (refer to FIG2). In addition, the support frame 330 shown in FIG3b may correspond to at least a portion of the support frame 230 shown in FIG2 above (refer to FIG2).

[0053] In an embodiment, when the substrate processing apparatus 110 (see FIG1) performs a heating process, each of the plurality of lasers (321_1, 321_2, ..., 321_18) can be controlled by the electronic device 120 (see FIG1) to irradiate at least a portion of the plurality of light-absorbing portions (311_1, 311_2, ..., 311_18) with laser light. The plurality of lasers (321_1, 321_2, ..., 321_18) can be arranged between cooling lines 322. In FIG3b, the first to eighteenth lasers 321_1, 321_2, ..., 321_18 are shown to be arranged radially around the support frame 330, but this is only to illustrate a configuration according to one embodiment of the present invention and does not limit the configuration of the plurality of lasers (321_1, 321_2, ..., 321_18) according to an embodiment of the present invention. According to embodiments of the present invention, a plurality of lasers (321_1, 321_2, ..., 321_18) can be configured in any form for irradiating lasers.

[0054] In an embodiment, each of the plurality of lasers (321_1, 321_2, ..., 321_18) can irradiate a light-absorbing portion corresponding to each of the plurality of lasers (321_1, 321_2, ..., 321_18) based on the control of the electronic device 120. The laser has a wavelength set according to at least a portion of semiconductor process method information stored in the electronic device 120, light absorptivity information of each of the plurality of light-absorbing portions (311_1, 311_2, ..., 311_18), and state information of the substrate processing apparatus 110. Information regarding the light-absorbing portion corresponding to each of the plurality of lasers (321_1, 321_2, ..., 321_18) can be preset and stored in the electronic device 120, or confirmed by the electronic device 120 based on the state information of the substrate processing apparatus 110 and the semiconductor process method information stored in the electronic device 120.

[0055] In the embodiments, at least a portion of the first to eighteenth lasers 321_1, 321_2, ..., 321_18 can be configured to correspond to at least a portion of the first to eighteenth light-absorbing portions 311_1, 311_2, ..., 311_18. As an example, as shown in Figures 3a and 3b, when the support chuck 310 includes the first to eighteenth lasers 311_1, 311_2, ..., 311_18, and the plate 320 includes the first to eighteenth light-absorbing portions 321_1, 321_2, ..., 321_18, the first to eighteenth lasers 321_1, 321_2, ..., 321_18 can be configured to correspond one-to-one with the first to eighteenth light-absorbing portions 311_1, 311_2, ..., 311_18. In this case, the laser irradiated by the first laser 321_1 can be absorbed by the first light absorption unit 311_1, the laser irradiated by the second laser 321_2 can be absorbed by the second light absorption unit 311_2, the laser irradiated by the third laser 321_3 can be absorbed by the third light absorption unit 311_3, and the laser irradiated by the eighteenth laser 321_18 can be absorbed by the eighteenth light absorption unit 311_18.

[0056] As another example, the first to eighteenth lasers 321_1, 321_2, ..., 321_18 can be configured to correspond to at least two of the first to eighteenth light absorption units 311_1, 311_2, ..., 311_18 in a one-to-many correspondence. In this case, the laser irradiated by the first laser 321_1 can be absorbed by the first light absorption section 311_1 and any light absorption section adjacent to the first light absorption section 311_1; the laser irradiated by the second laser 321_2 can be absorbed by any light absorption section adjacent to the second light absorption section 311_2; the laser irradiated by the third laser 321_3 can be absorbed by the third light absorption section 311_3 and any light absorption section adjacent to the third light absorption section 311_3; and the laser irradiated by the eighteenth laser 321_18 can be absorbed by the eighteenth light absorption section 311_18 and any light absorption section adjacent to the eighteenth light absorption section 311_18. As another example, at least two of the first to eighteenth lasers 321_1, 321_2, ..., 321_18 can be configured to have a many-to-one correspondence with each of the first to eighteenth light-absorbing sections 311_1, 311_2, ..., 311_18, or at least two of the first to eighteenth lasers 321_1, 321_2, ..., 321_18 can be configured to have a many-to-many correspondence with at least two of the first to eighteenth light-absorbing sections 311_1, 311_2, ..., 311_18.

[0057] In Figures 3a and 3b, the support chuck 310 is shown to include first to eighteenth light-absorbing portions 311_1, 311_2, ..., 311_18, and the plate 320 includes first to eighteenth lasers 321_1, 321_2, ..., 321_18. However, this is only one embodiment of the present invention and does not limit the structure according to the present invention. According to an embodiment of the present invention, the support chuck 310 may include any number of light-absorbing portions, and the plate 320 may include any number of lasers.

[0058] On the other hand, in an embodiment, when the substrate processing apparatus 110 performs a cooling process, coolant can be inflowed into the cooling line 322 under the control of the electronic device 120. The coolant flowing into the cooling line 322 absorbs heat from the substrate SUB disposed on the support chuck 310, thereby reducing the temperature of the substrate SUB. In an embodiment, the cooling line 322 can be formed as a channel through which coolant can flow. In FIG. 3b, it is shown that the cooling line 322 is formed as a circulation channel with an integrated inflow and outflow portion, but this is only to illustrate the shape of the cooling line 322 according to one embodiment of the present invention and does not limit the shape of the cooling line 322 according to the embodiments of the present invention. According to another embodiment of the present invention, the cooling line 322 can be formed as a channel with a separate inflow and outflow portion. In this case, the coolant flowing into the inflow portion flows along the cooling line 322 and flows out to the outflow portion. In an embodiment, the type of coolant flowing into the cooling line 322 can be determined according to semiconductor process method information and may include at least one of hydrocarbons, carbon halogens, organic compounds, and inorganic compounds.

[0059] FIG4 is a block diagram illustrating the structure of an electronic device 400 according to an embodiment of the present invention.

[0060] The electronic device 400 shown in FIG4 can correspond to the electronic device 120 in FIG1 (refer to FIG1). Referring to FIG4, the electronic device 400 may include a control unit 410, a temperature measuring unit 420, a distance adjusting unit 430, a heating process control unit 440, and a cooling process control unit 450. In FIG4, the control unit 410, the temperature measuring unit 420, the distance adjusting unit 430, the heating process control unit 440, and the cooling process control unit 450 are shown as physically separated structures, but this is only for the convenience of explanation and does not limit the structure of the electronic device 400 of the embodiments of the present invention. The control unit 410, the temperature measuring unit 420, the distance adjusting unit 430, the heating process control unit 440, and the cooling process control unit 450 in the electronic device 400 of the embodiments of the present invention may refer to logically separated structures.

[0061] In this embodiment, the control unit 410 can execute a temperature control process for the substrate processing apparatus 110 (see FIG. 1) based on a program (or algorithm) stored in memory. Specifically, the control unit 410 can confirm whether the substrate SUB (see FIG. 2) is disposed on the support chuck 210 (see FIG. 2) of the substrate processing apparatus 110. When it is confirmed that the substrate SUB is disposed on the support chuck 210, the control unit 410 can execute a temperature control process for the substrate processing apparatus 110 based on semiconductor process method information stored in memory. During the execution of temperature control, the control unit 410 can control the temperature measurement unit 420, the distance adjustment unit 430, the heating process control unit 440, and the cooling process control unit 450.

[0062] In this embodiment, the temperature measurement unit 420 can acquire temperature information measured for the substrate SUB disposed on the support chuck 210 and provide the acquired temperature information to the control unit 410. In some embodiments, a temperature sensor for measuring the temperature of the substrate SUB can be provided in the support chuck 210, and the temperature information measured from the temperature sensor can be provided to the temperature measurement unit 420.

[0063] In this embodiment, the distance adjustment unit 430 can control the up-and-down movement of the support frame 230 (see FIG2). Specifically, when the substrate processing apparatus 110 performs a heating process, the support frame 230 can be raised to separate the support chuck 210 and the plate 220 (see FIG2). The height of the support frame 230 can be determined based on at least one of semiconductor process method information, information related to the specifications of the plurality of light-absorbing parts 211_1, 211_2, 211_3, 211_4 (see FIG2) in the support chuck 210, and information related to the specifications of the plurality of lasers 221_1, 221_2, 221_3, 221_4 (see FIG2) in the plate 220. On the other hand, when the substrate processing apparatus 110 performs a cooling process, the support frame 230 can be lowered to bring the support chuck 210 into contact with the plate 220. The specific operation of the support frame 230 of the distance adjustment unit 430 moving up and down according to the process steps will be explained in detail with reference to Figures 6 to 9, which will be described later.

[0064] In this embodiment, when a heating process is performed in the substrate processing apparatus 110, the heating process control unit 440 can control the output of a plurality of lasers 221_1, 221_2, 221_3, 221_4 in the board 220. Specifically, the heating process control unit 440 can control the output of each of the plurality of lasers 221_1, 221_2, 221_3, 221_4 and the output wavelength based on at least one of semiconductor process method information, information related to the specifications of the plurality of light absorption units 211_1, 211_2, 211_3, 211_4, and information related to the specifications of the plurality of lasers 221_1, 221_2, 221_3, 221_4. The driving method of the plurality of lasers 221_1, 221_2, 221_3, and 221_4 of the heating process control unit 440 will be described in detail with reference to Figures 6 and 7, which will be described later.

[0065] In this embodiment, when a cooling process is performed in the substrate processing apparatus 110, the cooling process control unit 450 can control the flow of coolant into and out of the cooling lines 222 in the plate 220 (see FIG2). Specifically, the cooling process control unit 450 can supply coolant to the inflow portion of the cooling lines 222 based on at least one of semiconductor process method information, information related to the specifications of the plate 220, information related to the specifications of the cooling lines 222, and information on the coolant used in the substrate processing apparatus 110. The coolant supplied to the inflow portion can flow to the outflow portion.

[0066] In some embodiments, the inflow portion of the cooling line 222 may be provided with a first valve for controlling the inflow of coolant, and the outflow portion of the cooling line 222 may be provided with a second valve for controlling the outflow of coolant. The cooling process control unit 450 can control the inflow of coolant into the cooling line 222 by controlling the opening and closing of the first and second valves. The driving method of the cooling line 222 according to the cooling process control unit 450 will be described in detail with reference to Figures 8 and 9 described later.

[0067] FIG5 is a flowchart illustrating the operation method of the substrate processing system 10 (refer to FIG1) according to an embodiment of the present invention.

[0068] In step S510, the substrate processing apparatus 110 according to an embodiment of the present invention can, under the control of the electronic device 120 (see FIG2), arrange the substrate SUB (see FIG2) flowing in from the outside onto the support chuck 210 (see FIG2). In an embodiment, the substrate SUB can be provided from a cavity for performing a process prior to the process performed in the substrate processing apparatus 110, and the substrate processing apparatus 110 can arrange the substrate SUB disposed on the support chuck 210 to facilitate the performance of the process performed in the substrate processing apparatus 110.

[0069] In step S520, the substrate processing apparatus 110 of the present invention can perform a heating process under the control of the electronic device 120. The substrate processing apparatus 110 can raise the temperature of the substrate SUB by means of the heating process. The electronic device 120 can control the substrate processing apparatus 110 based on at least one of the following: semiconductor process method information stored in the electronic device 120; information related to the specifications of the plurality of light-absorbing portions 211_1, 211_2, 211_3, 211_4 (see FIG2) in the substrate processing apparatus 110; and information related to the specifications of the plurality of lasers 221_1, 221_2, 221_3, 221_4 (see FIG2) in the board 220.

[0070] In some embodiments, information related to the specifications of the plurality of light-absorbing portions 211_1, 211_2, 211_3, 211_4 may include light absorptivity information of each of the plurality of light-absorbing portions 211_1, 211_2, 211_3, 211_4, and information related to the specifications of the plurality of lasers 221_1, 221_2, 221_3, 221_4 may include output wavelength range information of each of the plurality of lasers 221_1, 221_2, 221_3, 221_4. The method for performing a heating process in the substrate processing apparatus 110 will be described in detail with reference to FIGS. 6 and 7, which will be described later.

[0071] In step S530, the substrate processing apparatus 110 according to an embodiment of the present invention can perform a cooling process under the control of the electronic device 120. The substrate processing apparatus 110 can reduce the temperature of the substrate SUB by means of the cooling process. The electronic device 120 can control the substrate processing apparatus 110 based on at least one of the following: semiconductor process method information stored in the electronic device 120, information related to the specifications of the board 220 (see FIG2) in the substrate processing apparatus 110, information related to the specifications of the cooling line 222 (see FIG2) in the substrate processing apparatus 110, and coolant information used in the substrate processing apparatus 110.

[0072] In some embodiments, information related to the specifications of the board 220 may include at least one of the material information and area information of the board 220. Information related to the specifications of the cooling line 222 may include at least one of the material information of the pipe constituting the cooling line 222, the thermal conductivity information of the pipe constituting the cooling line 222, the surface area information of the cooling line 222, the flow rate information that can be supplied by the cooling line 222, and the cooling capacity information of the cooling line 222. The coolant information may include at least one of the material properties information of the coolant, the flow rate information of the coolant, and the heat absorption information of the coolant. The method of performing a cooling process by the substrate processing apparatus 110 will be described in detail with reference to FIG8 and FIG9 described later.

[0073] In step S540, the electronic device 120 can determine whether the process for the substrate SUB has ended based on the semiconductor process method information stored in the electronic device 120. If it is determined based on the semiconductor process information in the semiconductor process method information that the process for the substrate SUB has not ended, the process can return to step S520. On the other hand, if it is determined based on the semiconductor process information in the semiconductor process method information that the process for the substrate SUB has ended, the process can end.

[0074] FIG6 is a diagram illustrating the heating process operation of the substrate processing apparatus 600 according to an embodiment of the present invention.

[0075] The substrate processing apparatus 600 shown in FIG. 6 can correspond to the substrate processing apparatus 110 of FIG. 1 (see FIG. 1). When the substrate processing apparatus 600 is controlled by the electronic device 120 (see FIG. 1) according to an embodiment of the present invention to perform a heating process on a substrate SUB disposed on a support chuck 610, the support frame 630 can be raised such that the support chuck 610 and the plate 620 are separated by a distance corresponding to the separation distance determined by the electronic device 120. As the support frame 630 is raised, the support chuck 610 can be raised with respect to the position of the plate 620. In the embodiment, the electronic device 120 can determine the separation distance between the support chuck 610 and the plate 620 based on at least one of semiconductor process method information, information related to the specifications of a plurality of light-absorbing portions 611_1, 611_2, 611_3, 611_4, and information related to the specifications of a plurality of lasers 621_1, 621_2, 621_3, 621_4 in the plate 620.

[0076] In addition, in an embodiment, when the substrate processing apparatus 600 is controlled by the electronic device 120 (see FIG1) according to an embodiment of the present invention to perform a heating process on the substrate SUB disposed on the support chuck 610, the electronic device 120 can determine whether each of the plurality of lasers 621_1, 621_2, 611_3, 611_4 outputs and the output wavelength based on at least one of semiconductor process method information, information related to the specifications of the plurality of light absorption sections 611_1, 611_2, 611_3, 611_4, and information related to the specifications of the plurality of lasers 621_1, 621_2, 621_3, 621_4 in the board 620.

[0077] In this embodiment, the semiconductor process method information may include at least one of semiconductor process information and heating temperature information for the heating process. The information related to the specifications of the plurality of light absorption sections 611_1, 611_2, 611_3, 611_4 may include light absorption rate information of each of the plurality of light absorption sections 611_1, 611_2, 611_3, 611_4. The information related to the specifications of the plurality of lasers 621_1, 621_2, 621_3, 621_4 may include output wavelength range information of each of the plurality of lasers 621_1, 621_2, 621_3, 621_4.

[0078] As a specific example, the heating process performed by the substrate processing apparatus 600 may include at least one of a pre-heating process, a soaking process, and a wetting process. In this case, the semiconductor process method information may include at least one of a first heating temperature information for the pre-heating process, a second heating temperature information for the soaking process, and a third heating temperature information for the wetting process. When performing a preheating process, the electronic device 120 can determine a first separation distance between the support chuck 610 and the plate 620 used for performing the preheating process, and a first output wavelength of the plurality of lasers 621_1, 621_2, 621_3, and 621_4. When performing an immersion process, the electronic device 120 can determine a second separation distance between the support chuck 610 and the plate 620 used for performing the immersion process, and a second output wavelength of the plurality of lasers 621_1, 621_2, 621_3, and 621_4. When performing a wetting process, the electronic device 120 can determine a third separation distance between the support chuck 610 and the plate 620 used for performing the wetting process, and a third output wavelength of the plurality of lasers 621_1, 621_2, 621_3, and 621_4.

[0079] The first heating temperature for the preheating process can be relatively lower than the second heating temperature for the immersion process and the third heating temperature for the wetting process, and the second heating temperature for the immersion process can be relatively lower than the third heating temperature for the wetting process. Therefore, the first separation distance can be greater than the second and third separation distances, and the second separation distance can be greater than the third separation distance. Furthermore, the first output wavelength can be longer than the second and third output wavelengths, and the second output wavelength can be longer than the third output wavelength.

[0080] On the other hand, in some embodiments, the output and output wavelength of each of the plurality of lasers 621_1, 621_2, 621_3, and 621_4 can be set differently. As an example, during the preheating process, the (first) laser 621_1 and the (third) laser 621_3 can be configured to irradiate a laser with a first output wavelength, but the (second) laser 621_2 and the (fourth) laser 621_4 can also be configured not to irradiate a laser. In this case, the (first) laser 621_1 can be configured to irradiate the (first) light absorption section 611_1 and the (second) light absorption section 611_2, and the (third) laser 621_3 can irradiate the (third) light absorption section 611_3 and the (fourth) light absorption section 611_4. As another example, during the preheating process, (first) laser 621_1 and (fourth) laser 621_4 are configured to irradiate with a laser of a first output wavelength, but (second) laser 621_2 and (third) laser 621_3 can also be configured to irradiate with a laser of a second output wavelength. However, for ease of explanation, in the embodiments described below, it is assumed that multiple lasers 621_1, 621_2, 621_3, and 621_4 all irradiate with lasers of the same output wavelength.

[0081] When performing a preheating process on the substrate SUB, the electronic device 120 can control the support frame 630 to separate the support chuck 610 and the plate 620 by a first separation distance. When the distance between the support chuck 610 and the plate 620 reaches the first separation distance, the electronic device 120 can control multiple lasers 621_1, 621_2, 621_3, and 621_4 to irradiate a laser of a first output wavelength. Although not shown, the temperature sensor in the support chuck 610 can measure the temperature of the substrate SUB. When it is confirmed that the temperature of the substrate SUB has reached a first heating temperature, the electronic device 120 can control multiple lasers 621_1, 621_2, 621_3, and 621_4 to irradiate a first output wavelength of laser light from the multiple lasers 621_1, 621_2, 621_3, and 621_4 at a first time. The first time is determined based on at least one of semiconductor process method information and status information of the substrate processing apparatus 600. After the first time, the electronic device 120 can end the preheating process of the substrate processing apparatus 600.

[0082] When performing an immersion process on the substrate SUB, the electronic device 120 can control the support frame 630 to separate the support chuck 610 and the plate 620 by a second separation distance. When the distance between the support chuck 610 and the plate 620 reaches the second separation distance, the electronic device 120 can control a plurality of lasers 621_1, 621_2, 621_3, and 621_4 to irradiate a second output wavelength of laser at a second time. The second time is determined based on at least a portion of semiconductor process method information and state information of the substrate processing apparatus 600. After the second time, the immersion process of the substrate processing apparatus 600 can be terminated.

[0083] On the other hand, when performing a wetting process on the substrate, the electronic device 120 controls the support frame 630 to separate the support chuck 610 and the plate 620 by a third separation distance. When the distance between the support chuck 610 and the plate 620 reaches the third separation distance, the electronic device 120 can control multiple lasers 621_1, 621_2, 621_3, and 621_4 to irradiate a third output wavelength at a third time. The third time is determined based on at least a portion of semiconductor process method information and the status information of the substrate processing apparatus 600. After the third time, the wetting process of the substrate processing apparatus 600 can be terminated.

[0084] According to an embodiment of the present invention, based on the output status and output wavelength of each of the plurality of lasers 621_1, 621_2, 621_3, 621_4 determined according to the method described above, the laser irradiated from the plurality of lasers 621_1, 621_2, 621_3, 621_4 can absorb at least a portion of the plurality of light absorption portions 611_1, 611_2, 611_3, 611_4 corresponding to each of the plurality of lasers 621_1, 621_2, 621_3, 621_4, and based on the thermal energy of the laser absorbed by the plurality of light absorption portions 611_1, 611_2, 611_3, 611_4, it can be transferred to the substrate SUB on the support chuck 610 via the support chuck 610.

[0085] On the other hand, according to some embodiments of the present invention, when the substrate processing apparatus 600 is controlled by the electronic device 120 according to an embodiment of the present invention to perform a heating process on the substrate SUB disposed on the support chuck 610, the electronic device 120 can determine the output direction of each of the plurality of lasers 621_1, 621_2, 621_3, 611_4 based on at least one of semiconductor process method information, information related to the specifications of the plurality of light absorption sections 611_1, 611_2, 611_3, 611_4, and information related to the specifications of the plurality of lasers 621_1, 621_2, 621_3, 621_4 in the board 620. Depending on the output direction of each of the plurality of lasers 621_1, 621_2, 621_3, 621_4, the amount of laser energy absorbed from at least one of the at least one light-absorbing portion 611_1, 611_2, 611_3, 611_4 corresponding to each of the plurality of lasers 621_1, 621_2, 621_3, 621_4 can be different. Specifically, the embodiment described above can be applied to temperature control of each region of the substrate SUB.

[0086] For example, when the Nth output wavelength laser irradiated from the (first) laser 621_1 is irradiated to the (first) light absorption section 611_1 in an orthogonal direction, the Nth output wavelength laser irradiated from the (second) laser 621_2 is irradiated to the (second) light absorption section 611_2 in a 45° direction, the Nth output wavelength laser irradiated from the (third) laser 621_3 is irradiated to the (third) light absorption section 611_3 in a 45° direction, and the Nth output wavelength laser irradiated from the (fourth) laser 621_4 is irradiated to the (fourth) light absorption section 611_4 in an orthogonal direction, the heat absorbed by the (first) light absorption section 611_3 and the (fourth) light absorption section 611_4 may be different from the heat absorbed by the (second) light absorption section 611_2 and the (third) light absorption section 611_3. By adjusting the output direction as described above, the substrate processing apparatus 600 can minimize thermal imbalances caused by the positional relationship of the plurality of lasers 621_1, 621_2, 621_3, 621_4 and the plurality of light-absorbing portions 611_1, 611_2, 611_3, 611_4. Furthermore, by adjusting the output direction as described above, the substrate processing apparatus 600 can control the temperature of each region of the substrate SUB disposed on the support chuck 610.

[0087] FIG7 is a flowchart illustrating the operation method of a substrate processing apparatus 110 (refer to FIG1) for performing a heating process according to an embodiment of the present invention.

[0088] In step S710, the substrate processing apparatus 110 according to an embodiment of the present invention can control the laser settings by means of the electronic device 120 (see FIG2). Specifically, the electronic device 120 can determine at least one of the following based on semiconductor process method information, information related to the specifications of the plurality of light absorption sections 211_1, 211_2, 211_3, 211_4 (see FIG2), and information related to the specifications of the plurality of lasers 221_1, 221_2, 221_3, 221_4 in the board 220 (see FIG2): whether each laser outputs, its output wavelength, and its output direction. Each laser in the substrate processing apparatus 110 can prepare for a heating process based on the determined output settings.

[0089] In step S720, the substrate processing apparatus 110 of the embodiment of the present invention can raise the support chuck 210 corresponding to the spacing between the support chuck 210 (see FIG2) and the plate 220 determined by the electronic device 120. The spacing between the support chuck 210 and the plate 220 can be determined based on at least one of semiconductor process method information, information related to the specifications of the plurality of light-absorbing portions 211_1, 211_2, 211_3, 211_4, and information related to the specifications of the plurality of lasers 221_1, 221_2, 221_3, 221_4 in the plate 220. In some embodiments, step S720 can be performed concurrently with step S710 described above.

[0090] In step S730, the substrate processing apparatus 110 of the embodiment of the present invention can perform laser irradiation on each of the plurality of lasers 221_1, 221_2, 221_3, 221_4 based on the output settings determined in step S710 above. Each of the plurality of lasers 221_1, 221_2, 221_3, 221_4 can irradiate at least one light absorption portion 211_1, 211_2, 211_3, 211_4 corresponding to each of the plurality of lasers 221_1, 221_2, 221_3, 221_4 (see FIG2).

[0091] In step S740, the substrate processing apparatus 110 according to an embodiment of the present invention can determine whether the time for performing the heating process by means of the plurality of lasers 221_1, 221_2, 221_3, 221_4 is greater than or equal to a first threshold time. The first threshold time can be determined by the electronic device 120 based on at least one of semiconductor process method information, information related to the specifications of the plurality of light absorption portions 211_1, 211_2, 211_3, 211_4, and information related to the specifications of the plurality of lasers 221_1, 221_2, 221_3, 221_4 in the board 220. When the time for performing the heating process by means of the plurality of lasers 221_1, 221_2, 221_3, 221_4 is less than the first threshold time, the process can return to step S730. On the other hand, the process can end when the heating process performed by multiple lasers 221_1, 221_2, 221_3, and 221_4 takes longer than the first threshold time.

[0092] FIG8 is a diagram illustrating the cooling process operation of the substrate processing apparatus 800 according to an embodiment of the present invention.

[0093] The substrate processing apparatus 800 shown in FIG8 can correspond to the substrate processing apparatus 110 of FIG1 (see FIG1). When the substrate processing apparatus 800 is controlled by the electronic device 120 (see FIG1) according to an embodiment of the present invention to perform a cooling process on a substrate SUB disposed on a support chuck 810, the support frame 830 can be lowered by the electronic device 120 so that a surface of the support chuck 810 can contact a surface of the plate 820. As the support frame 830 is lowered, the support chuck 810 can be lowered with respect to the position of the plate 820. In the embodiment, the electronic device 120 can control the substrate processing apparatus 800 based on at least one of semiconductor process method information, information related to the specifications of the plate 820, information related to the specifications of the cooling line 822, and information on the coolant used in the substrate processing apparatus 800, so that the substrate processing apparatus 800 supplies coolant to the inflow portion of the cooling line 822.

[0094] When the support chuck 810 contacts the plate 820, the heat energy of the substrate SUB can be conducted to the support chuck 810 supporting the substrate SUB, and the heat energy conducted to the support chuck 810 can be absorbed by the coolant flowing along the cooling line 822 in the plate 820. Although not shown, a temperature sensor in the support chuck 810 can measure the temperature of the substrate SUB. When it is confirmed that the temperature of the substrate SUB has reached the cooling temperature, the electronic device 120 can control the substrate processing apparatus 800 so that the coolant can flow in the cooling line 822 for a fourth time, wherein the fourth time is determined based on at least one of semiconductor process method information and status information of the substrate processing apparatus 800. After the fourth time, the electronic device 120 can end the cooling process of the substrate processing apparatus 800.

[0095] FIG9 is a flowchart illustrating the operation method of a substrate processing apparatus 110 (refer to FIG1) for performing a cooling process according to an embodiment of the present invention.

[0096] In step S910, the substrate processing apparatus 110 of the present invention can control the setting of the cooling line 222 (see FIG2) by means of the electronic device 120 (see FIG2). Specifically, the electronic device 120 can control the setting of the cooling line 222 based on at least one of semiconductor process method information, information related to the specifications of the board 220 (see FIG2) in the substrate processing apparatus 110, information related to the specifications of the cooling line 222 in the substrate processing apparatus 110, and information on the coolant used in the substrate processing apparatus 110. As an example, the electronic device 120 can determine at least one of the following: the type of coolant required to reach a specific cooling temperature, the amount of coolant required to reach a specific cooling temperature, and the coolant supply rate required to reach a specific cooling temperature, based on at least one of the following: semiconductor process method information, information related to the specifications of the board 220 in the substrate processing apparatus 110, information related to the specifications of the cooling line 222 in the substrate processing apparatus 110, and information on the coolant used in the substrate processing apparatus 110. The cooling line 222 in the substrate processing apparatus 110 can be used to prepare a cooling process based on the setting of the cooling line 222 determined by the electronic device 120.

[0097] In step S920, the substrate processing apparatus 110 according to an embodiment of the present invention can lower the support chuck 210 so that a surface of the plate 220 contacts a surface of the support chuck 210. In some embodiments, step S920 can be performed concurrently with step S910.

[0098] In step S930, the substrate processing apparatus 110 according to an embodiment of the present invention can activate the cooling line 222 based on the configuration of the cooling line 222 determined in step S910 above. Specifically, the substrate processing apparatus 110 can supply coolant to the cooling line 222 based on the configuration of the cooling line 222 by opening a first valve disposed in the inflow portion of the cooling line 222. On the other hand, in order to allow the coolant supplied to the cooling line 222 to remain within the cooling line 222, a second valve disposed in the inflow portion of the cooling line 222 can be closed, and coolant can flow out to the outflow portion of the cooling line 222 by opening a second valve disposed in the outflow portion of the cooling line 222.

[0099] In step S940, the substrate processing apparatus 110 of the embodiment of the present invention can determine whether the time for performing the cooling process via the cooling line 222 is greater than or equal to a second threshold time. The second threshold time can be determined by the electronic device 120 based on at least one of semiconductor process method information, information related to the specifications of the board 220 in the substrate processing apparatus 110, information related to the specifications of the cooling line 222 in the substrate processing apparatus 110, and information about the coolant used in the substrate processing apparatus 110. When the time for performing the cooling process via the cooling line 222 is less than the second threshold time, the process can return to step S930. On the other hand, when the time for performing the cooling process via the cooling line 222 is greater than or equal to the second threshold time, the process can end.

[0100] FIG10a is a diagram illustrating the heating process of a substrate processing apparatus 1000a according to another embodiment of the present invention. FIG10b is a diagram illustrating the cooling process of a substrate processing apparatus 1000b according to another embodiment of the present invention.

[0101] The substrate processing apparatuses 1000a and 1000b shown in Figures 10a and 10b can correspond to the substrate processing apparatus 110 of Figure 1 (see Figure 1). However, the substrate processing apparatuses 1000a and 1000b shown in Figures 10a and 10b differ from the substrate processing apparatus 200 shown in Figure 2 (see Figure 2) in that the position of the support chuck 1010 is fixed in the cavity, and the position of the plate 1020 can be changed according to the up-and-down movement of the support frame 1030. In the substrate processing apparatuses 1000a and 1000b shown in Figures 10a and 10b, one side of the support frame 1030 can be fixed in the form of receiving or inserting into a groove or recess formed in the center of the plate 1020. The support frame 1030 can be moved up and down under the control of the electronic device 120 (see Figure 1).

[0102] Referring to FIG10a, when the substrate processing apparatus 1000a is controlled by the electronic device 120 according to an embodiment of the present invention to perform a heating process on the substrate SUB disposed on the support chuck 1010, the support frame 1030 can be lowered so that the support chuck 1010 and the plate 1020 can be spaced apart corresponding to the separation distance determined by the electronic device 120. As the support frame 1030 is lowered, the plate 1020 can be lowered with reference to the position of the support chuck 1010. In the embodiment shown in FIG10a, the electronic device 120 may determine at least one of the following based on semiconductor process method information, information related to the specifications of the plurality of light absorption sections 1011_1, 1011_2, 1011_3, 1011_4, and information related to the specifications of the plurality of lasers 1021_1, 1021_2, 1021_3, 1021_4 in the plate 1020: the spacing distance between the support chuck 1010 and the plate 1020, whether each of the plurality of lasers 1021_1, 1021_2, 1021_3, 1021_4 is outputting, the output wavelength of each of the plurality of lasers 1021_1, 1021_2, 1021_3, 1021_4, and the output direction of the plurality of lasers 1021_1, 1021_2, 1021_3, 1021_4.

[0103] According to the embodiment, when the support frame 1030 is lowered, thereby supporting the chuck 1010 and the plate 1020 to be spaced apart by a distance determined by the electronic device 120, by means of the electronic device 120, each of the plurality of lasers 1021_1, 1021_2, 1021_3, 1021_4 can irradiate at least a portion of the plurality of light absorption portions 1011_1, 1011_2, 1011_3, 1011_4 corresponding to each of the plurality of lasers 1021_1, 1021_2, 1021_3, 1021_4 based on the set output information. In some embodiments, even during the period when the support frame 1030 is lowered, each of the plurality of lasers 1021_1, 1021_2, 1021_3, 1021_4 can, by means of the electronic device 120, irradiate at least a portion of the plurality of light absorption sections 1011_1, 1011_2, 1011_3, 1011_4 corresponding to each of the plurality of lasers 1021_1, 1021_2, 1021_3, 1021_4 based on the set output information.

[0104] Referring to FIG10b, when the substrate processing apparatus 1000b is controlled by the electronic device 120 according to an embodiment of the present invention to perform a cooling process on the substrate SUB disposed on the support chuck 1010, the support frame 1030 can be raised by the electronic device 120 so that the support chuck 1010 can contact the plate 1020. As the support frame 1030 is raised, the plate 1020 can be raised based on the position of the support chuck 1010. In the embodiment shown in FIG10b, the electronic device 120 can also supply coolant to the inflow portion of the cooling line 1022 based on at least one of semiconductor process method information, information related to the specifications of the plate 1020, information related to the specifications of the cooling line 1022, and coolant information used in the substrate processing apparatus 1000b.

[0105] FIG11 is a block diagram illustrating an electronic device 1100 according to an embodiment of the present invention.

[0106] The electronic device 1100 shown in FIG11 can correspond to the electronic device 120 of FIG1 above (refer to FIG1). Referring to FIG11, the electronic device 1100 according to an embodiment of the present invention may include a transceiver 1110, a processor 1120 and a memory 1130.

[0107] Electronic device 1100 can connect to and exchange data with external devices via transceiver 1110.

[0108] The processor 1120 can execute the work performed by at least one device described in Figures 1 to 10b, or it can execute at least one method described in Figures 1 to 10b. Furthermore, the processor 1120 can execute a program for performing the work performed by at least one device described in Figures 1 to 10b or by at least one method described in Figures 1 to 10b, and can process information to perform the work performed by at least one device described in Figures 1 to 10b or by at least one method described in Figures 1 to 10b, and control the substrate processing apparatus 110 (see Figure 1) based on the processed information.

[0109] The memory 1130 may include at least one of volatile memory and non-volatile memory, and may store the code of a program executed by the processor 1120.

[0110] On the other hand, the embodiments disclosed in this specification can be implemented in the form of a recording medium storing computer-executable instructions. The instructions can be stored in the form of program code, and when executed by a processor, the operation of the disclosed embodiments can be performed by generating a program module. The recording medium can be implemented as a computer-readable recording medium. Computer-readable recording media can include all types of recording media storing instructions that can be decoded by a computer. For example, it can be ROM, RAM, magnetic tape, magnetic disk, flash memory, optical data storage device, etc.

[0111] The above description describes specific embodiments for implementing the present invention. The present invention includes not only the above embodiments but also embodiments that can be easily modified or modified in design. Furthermore, the present invention includes techniques that can be easily modified and implemented using the above embodiments. Therefore, the scope of the present invention should not be limited to the above embodiments but should be defined by the following patent application scope and other content equivalent to the patent application scope of the present invention.

[0112] On the other hand, this invention is derived from research conducted as part of a project undertaken by the Ministry of Science and ICT of Korea on the development of core technologies for high-performance semiconductor high-efficiency micro-pitch micro-bump bonding process equipment (Research Project No.: RS-2024-00431837, Project No.: 2710018701, Project No.: 00431837, Project Management (Expert) Agency: Korea Research Foundation, Research Company: Semiconductor Advanced Packaging Core Technology Development, Project Execution Agency: PSK Holdings Limited, Research Period: May 1, 2024 to January 31, 2025). In all aspects of this invention, Korea Information, as the project provider, has no property interest. [Simplified Explanation of the Diagram]

[0113] FIG1 is a block diagram illustrating a substrate processing system according to an embodiment of the present invention.

[0114] Figure 2 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

[0115] Figure 3a is a top view of the support chuck of an embodiment of the present invention.

[0116] Figure 3b is a top view of the plate according to an embodiment of the present invention.

[0117] FIG4 is a block diagram illustrating the structure of an electronic device according to an embodiment of the present invention.

[0118] FIG5 is a flowchart illustrating the operation method of the substrate processing system according to an embodiment of the present invention.

[0119] FIG6 is a diagram illustrating the heating process operation of the substrate processing apparatus according to an embodiment of the present invention.

[0120] FIG7 is a flowchart illustrating the operation method of a substrate processing apparatus for performing a heating process according to an embodiment of the present invention.

[0121] FIG8 is a diagram illustrating the cooling process operation of the substrate processing apparatus according to an embodiment of the present invention.

[0122] FIG9 is a flowchart illustrating the operation method of a substrate processing apparatus for performing a cooling process according to an embodiment of the present invention.

[0123] FIG10a is a diagram illustrating the heating process of a substrate processing apparatus according to another embodiment of the present invention.

[0124] FIG10b is a diagram illustrating the cooling process of a substrate processing apparatus according to another embodiment of the present invention.

[0125] FIG11 is a block diagram illustrating an electronic device for an embodiment of the present invention.

Claims

1. A substrate processing apparatus, comprising: A support chuck includes at least one light-absorbing portion; a plate includes at least one laser and a cooling line; and a support frame has a through-hole formed in the central portion of the plate, one side of which is received in a groove formed in the central portion of the support chuck. When a first process for raising the temperature is performed on a semiconductor substrate disposed on the support chuck, the support chuck and the plate are separated as the support frame is raised, and the at least one laser irradiates the at least one light-absorbing portion with laser light. When a second process for lowering the temperature is performed on the semiconductor substrate, the support chuck and the plate come into contact as the support frame is lowered, and coolant is supplied via the cooling line.

2. The substrate processing apparatus as described in claim 1, wherein, When the first process is performed, the support frame rises to a distance corresponding to a spacing distance determined based on at least one of the following information: semiconductor process method information, information related to the specifications of the at least one light-absorbing portion, and information related to the specifications of the at least one laser.

3. The substrate processing apparatus as described in claim 1, wherein, When the support chuck includes a plurality of light-absorbing sections and the plate includes a plurality of lasers, each of the plurality of lasers irradiates at least a portion of the plurality of light-absorbing sections corresponding to each of the plurality of lasers based on an output wavelength, the output wavelength being determined based on at least one of semiconductor process method information, information related to the specifications of each of the plurality of light-absorbing sections, and information related to the specifications of each of the plurality of lasers.

4. The substrate processing apparatus as described in claim 3, wherein, Each of the plurality of lasers irradiates at least a portion of a plurality of light-absorbing sections corresponding to each of the plurality of lasers based on an output direction, the output direction being determined based on at least one of the semiconductor process method information, information related to the specifications of each of the plurality of light-absorbing sections, and information related to the specifications of each of the plurality of lasers.

5. The substrate processing apparatus as described in claim 1, wherein, The cooling line performs coolant supply based on at least one of the following: semiconductor process method information, information related to the specifications of the board, information related to the specifications of the cooling line, and information about the coolant used.

6. The substrate processing apparatus as described in claim 1, wherein, The support chuck also includes a temperature sensor for measuring the temperature of the semiconductor substrate.

7. The substrate processing apparatus as described in claim 1, wherein, The cooling line is formed as either a first type of cooling line where an inlet for supplying the coolant and an outlet for discharging the coolant are integrated, or a second type of cooling line where the inlet and outlet are independent.

8. The substrate processing apparatus as described in claim 1, wherein, The coolant includes at least one of hydrocarbons, carbon halogens, organic compounds, and inorganic compounds.

9. A substrate processing apparatus, comprising: A support chuck, including at least one light-absorbing portion, is fixed in position within a cavity. A plate, including at least one laser and a cooling line, and a support frame, are accommodated in a groove formed in the center of the plate. When a first process for temperature increase is performed on a semiconductor substrate disposed on the support chuck, the support chuck and the plate are separated as the support frame is lowered, and the at least one laser irradiates the at least one light-absorbing portion with laser light. When a second process for temperature decrease is performed on the semiconductor substrate, the support chuck and the plate come into contact as the support frame is raised, and coolant is supplied via the cooling line.

10. A method of operating a substrate processing apparatus for performing temperature control on a semiconductor substrate, comprising the following steps: The steps include: placing the externally fed semiconductor substrate onto a support chuck; separating the support chuck from a plate and irradiating at least one light-absorbing portion in the support chuck with a laser using at least one laser in the plate to perform a first process for raising the temperature of the semiconductor substrate; and contacting the support chuck with the plate and supplying coolant via a cooling line in the plate to perform a second process for lowering the temperature of the semiconductor substrate.

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