Mask modification method

Abstract

A method for processing a substrate includes receiving the substrate on a substrate holder, the substrate including a patterned mask disposed over a patterned underlying layer, the patterned mask including notches. The method further includes having a plurality of polar angles and a plurality of processing times, each of the plurality of polar angles having an associated one of the plurality of processing times, and processing the substrate with a cyclic process for each of the plurality of polar angles. Each cycle of the cyclic process includes selecting a polar angle (θi) from the plurality of polar angles. Each cycle further includes tilting a processing tool such that a beam emitted from the processing tool strikes the substrate at the selected polar angle (θi), and emitting the beam at the selected polar angle (θi) for an ith timeframe (ti) corresponding to the selected polar angle (θi) to deposit an ith layer over the notches.

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