Pattern transfer by directed self-assembly (DSA) of block copolymers ‎‎(BCPS)

Abstract

Embodiments described herein relate to a method of patterning a resist layer with an exposed region and an unexposed region. In an embodiment, the method includes applying a block copolymer over the resist layer, where the block copolymer includes a polar region and a non-polar region, and where a chemical difference between the exposed region and the unexposed region allows for directed self-assembly of the block copolymer over the resist layer. In an embodiment, the method further includes selectively removing either the polar region or the non-polar region to form a patterned mask over the resist layer, and patterning the resist layer with an etching process using the patterned mask.

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