Semiconductor device manufacturing method

Abstract

A method for manufacturing a semiconductor device, the semiconductor device having a first semiconductor element and a second semiconductor element; the manufacturing method comprising: (a) forming an insulating layer on a first substrate having a first elastic coefficient higher than a second elastic coefficient; (b) forming the first semiconductor element having a first bonding surface on the insulating layer; (c) forming the second semiconductor element having a second bonding surface on a second substrate having the second elastic coefficient; (d) bonding the first bonding surface and the second bonding surface together to form a stack of the first semiconductor element and the second semiconductor element; and (e) removing the first substrate from the stack.

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