High density die to die interconnect shift correction for overlay alignment

TW202633431APending Publication Date: 2026-08-01APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-10-13
Publication Date
2026-08-01

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Abstract

A method of forming a DTD interconnect includes measuring a shift in a multi-die interconnect bridge of a partial DTD interconnect. A plurality of via channels and bridge via channels are formed in the build-up layers. A plurality of vias and a plurality of bridge vias are formed in the via channels and the bridge via channels. Interconnect layers are disposed over the plurality of vias and an elongated bridge interconnect is disposed over the plurality of bridge via channels. A plurality of package micro-bump pads and a plurality of bridge micro-bump pads are disposed over the plurality of vias and the bridge vias, respectively. The plurality of vias are aligned with the package micro-bump pads and the plurality of bridge vias are aligned with the plurality of bridge micro-bump pads. One or more dies are bonded to the DTD interconnect.
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